IRF7807VTRPBF International Rectifier, IRF7807VTRPBF Datasheet

MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807VTRPBF

Manufacturer Part Number
IRF7807VTRPBF
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7807VTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
25 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.3 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
9.5 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7807VPBFTR
IRF7807VTRPBF
IRF7807VTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7807VTRPBF
Manufacturer:
IOR-PBF
Quantity:
16 000
Part Number:
IRF7807VTRPBF
Manufacturer:
IR
Quantity:
20 000
• N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
(V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
100% R
Lead-Free
GS
≥ 4.5V)
G
Tested
Parameter
Parameter
ÃÃÃÃÃÃÃ
h
h
T
T
T
T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Symbol
T
Symbol
J
R
R
V
, T
V
I
P
I
I
DM
I
SM
θJA
DS
GS
D
θJL
S
D
STG
SO-8
DEVICE CHARACTERISTICS…
IRF7807VPbF
Typ
HEXFET
–––
–––
R
Q
Q
DS(on)
Q
OSS
SW
IRF7807V
-55 to 150
G
±20
8.3
6.6
2.5
1.6
2.5
30
66
66
®
G
S
S
S
IRF7807V
Power MOSFET
Max
50
20
17 mΩ
9.5 nC
3.4 nC
12 nC
1
2
3
4
T o p V ie w
PD-95210
Units
Units
°C/W
8
7
6
5
°C
W
V
A
A
D
D
D
D
A
11/3/04

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IRF7807VTRPBF Summary of contents

Page 1

N Channel Application Specific MOSFET • Ideal for Mobile DC-DC Converters • Low Conduction Losses • Low Switching Losses • 100% R Tested G • Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an ...

Page 2

IRF7807VPbF Electrical Characteristics Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current* Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Switch Charge ( gs2 gd Output Charge* ...

Page 3

Power MOSFET Selection for DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control ...

Page 4

IRF7807VPbF For the synchronous MOSFET Q2, R portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off ...

Page 5

I = 7.0A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.030 0.025 0.020 7.0A 0.015 0.010 2.0 4.0 ...

Page 6

IRF7807VPbF 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 Notes: 1. Duty factor Peak T ...

Page 7

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ...

Page 8

IRF7807VPbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...

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