ATP102-TL-H SANYO, ATP102-TL-H Datasheet
ATP102-TL-H
Specifications of ATP102-TL-H
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ATP102-TL-H Summary of contents
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... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP102 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...
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... Switching Time Test Circuit --15V --10V --20A =0.75Ω D PW=10μs D.C.≤1% G ATP102 P.G 50Ω S ATP102 Symbol Conditions V GS (off =--10V =--1mA | yfs | V DS =--10V =--20A R DS (on =--20A =--10V R DS (on =--10A =--4.5V Ciss V DS =--10V, f=1MHz Coss V DS =--10V, f=1MHz Crss ...
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... Drain Current Time -- --15V --10V 3 2 100 (on --0.1 --1.0 --10 Drain Current ATP102 -- --10V --45 Single pulse --40 --35 --30 --25 --20 --15 --10 Tc=25 ° C --5 Single pulse 0 0 --2.0 0 --0.5 IT14687 40 Tc=25 ° C Single pulse --13 --14 --15 --16 --60 --40 --20 IT14689 --100 --10V V GS =0V 5 Single pulse ...
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... Case Temperature °C Note on usage : Since the ATP102 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...