TPCA8009-H(TE12L,Q Toshiba, TPCA8009-H(TE12L,Q Datasheet

TPCA8009-H(TE12L,Q

Manufacturer Part Number

TPCA8009-H(TE12L,Q

Description

MOSFET N-CH 150V 7A 8-SOPA

Manufacturer

Toshiba

Datasheet

1.TPCA8009-HTE12LQ.pdf (7 pages)

Specifications of TPCA8009-H(TE12L,Q

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

350 mOhm @ 3.5A, 10V

Drain To Source Voltage (vdss)

150V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

10nC @ 10V

Input Capacitance (ciss) @ Vds

600pF @ 10V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

8-SOPA

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

TPCA8009HTE12LQTR

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High Speed Switching Applications

Switching Regulator Applications

DC/DC Converter Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

High-speed switching

Small gate charge: Q

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

(Tc=25℃) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

(Tc=25℃)

= 3.7 nC (typ.)

(Note 2a)

(Note 2b)

= 2.0 to 4.0 V (V

(t = 10 s)

(Note 1)

(Note 3)

= 100 μA (max) (V

TPCA8009-H

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 4.5S (typ.)

stg

= 0.23Ω (typ.)

= 10 V, I

= 150 V)

−55 to 150

Rating

150

±20

150

2.8

1.6

1.5

= 1 mA)

Unit

°C

Weight: 0.068 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

1, 2, 3 : SOURCE

4 : GATE

5, 6, 7, 8 : DRAIN

1.27

4.25±0.2

0.05 S

5.0±0.2

TPCA8009-H

0.4±0.1

2-5Q1A

2007-12-18

―

0.8±0.1

0.05 M A

0.15±0.05

0.595

Unit: mm

Related parts for TPCA8009-H(TE12L,Q

TPCA8009-H(TE12L,Q Summary of contents

Page 1

... DSS V 150 V DGR ± GSS 150 °C ch −55 to 150 T °C stg 1 TPCA8009-H Unit: mm 0.4±0.1 1.27 0. 0.15±0. 0.595 A 5.0±0.2 0. 4.25±0 0.8±0 SOURCE 4 : GATE DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.068 g (typ.) Circuit Configuration 2007-12-18 ...

Page 2

... Symbol Max Unit R 2.78 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCA8009-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2007-12-18 ...

Page 3

... Q g ∼ − 120 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8009-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 100 ⎯ ⎯ 150 ⎯ ⎯ 150 ⎯ ⎯ 100 ⎯ 2.0 4.0 ⎯ 0.23 0.35 ⎯ 2.1 4.5 ⎯ ...

Page 4

... Drain current I ( Common source 25°C Pulse test Drain-source voltage 1 Gate-source voltage V 10000 Common source Ta = 25° Pulse test 1000 100 10 100 0.1 4 TPCA8009-H I – 6 – Common source Ta = 25°C Pulse test 3 ( – (ON 100 Drain current I (A) D 2007-12-18 ...

Page 5

... Total gate charge Q g 100 Common source Ta = 25°C Pulse test 0.1 160 iss 3 C oss rss 0 −80 100 ( (nC) 5 TPCA8009-H − −1.2 −0.4 −0.8 Drain-source voltage V (V) DS − Common source = 1mA I D Pulse test − 120 160 Ambient temperature Ta (°C) 2007-12-18 ...

Page 6

... I D max (Pulse max(Continuous) DC Operation Tc = 25°C 1 *Single - pulse Tc = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0 100 Drain-source voltage – 0 Pulse width t ( 160 0 1000 (V) 6 TPCA8009-H (2) (1) (3) Single pulse 100 1000 P – 120 160 Case temperature Tc (°C) 2007-12-18 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8009-H 20070701-EN 2007-12-18 ...

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