MOSFET N-CH 30V 90A TO252-3

IPD031N03LG

Manufacturer Part NumberIPD031N03LG
DescriptionMOSFET N-CH 30V 90A TO252-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPD031N03LG datasheet
 


Specifications of IPD031N03LG

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.1 mOhm @ 30A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C90AVgs(th) (max) @ Id2.2V @ 250µA
Gate Charge (qg) @ Vgs51nC @ 10VInput Capacitance (ciss) @ Vds5300pF @ 15V
Power - Max94WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIPD021N03LG
IPD021N03LGINTR
IPD021N03LGINTR
IPD031N03LGXT
SP000236957
  
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Type
OptiMOS
®
3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
DS(on)
• Very low on-resistance R
DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Type
IPD031N03L G
• Pb-free plating; RoHS compliant
PG-TO252-3-11
Package
Marking
031N03L
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
2)
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1)
J-STD20 and JESD22
Rev. 1.03
Product Summary
V
DS
R
DS(on),max
I
D
1)
for target applications
product (FOM)
IPS031N03L G
PG-TO251-3-11
031N03L
Symbol Conditions
I
V
=10 V, T
=25 °C
D
GS
C
V
=10 V, T
=100 °C
GS
C
V
=4.5 V, T
=25 °C
GS
C
V
=4.5 V,
GS
T
=100 °C
C
I
T
=25 °C
D,pulse
C
3)
I
T
=25 °C
AS
C
=25 Ω
E
I
=90 A, R
AS
D
GS
I
=90 A, V
=24 V,
D
DS
dv /dt
di /dt =200 A/µs,
T
=175 °C
j,max
V
GS
page 1
IPD031N03L G
IPS031N03L G
30
V
3.1
mΩ
90
A
Value
Unit
90
A
90
90
79
400
90
60
mJ
6
kV/µs
±20
V
2008-04-15

IPD031N03LG Summary of contents

  • Page 1

    Type OptiMOS ® 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...

  • Page 2

    Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...

  • Page 3

    Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

  • Page 4

    Power dissipation P =f(T ) tot C 100 Safe operating area I =f =25 ° parameter limited by on-state ...

  • Page 5

    Typ. output characteristics I =f =25 ° parameter 200 4.5 V 160 120 Typ. transfer characteristics I =f |>2|I ...

  • Page 6

    Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...

  • Page 7

    Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...

  • Page 8

    Package Outline Rev. 1.03 PG-TO252-3-11 page 8 IPD031N03L G IPS031N03L G 2008-04-15 ...

  • Page 9

    Package Outline Rev. 1.03 PG-TO251-3-11 page 9 IPD031N03L G IPS031N03L G 2008-04-15 ...

  • Page 10

    ... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...