IPD031N03LG Infineon Technologies, IPD031N03LG Datasheet

MOSFET N-CH 30V 90A TO252-3

IPD031N03LG

Manufacturer Part Number
IPD031N03LG
Description
MOSFET N-CH 30V 90A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD031N03LG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
51nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 15V
Power - Max
94W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD021N03LG
IPD021N03LGINTR
IPD021N03LGINTR
IPD031N03LGXT
SP000236957

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD031N03LG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.03
1)
Type
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R
• Avalanche rated
• Pb-free plating; RoHS compliant
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
OptiMOS
Type
Package
Marking
J-STD20 and JESD22
®
3 Power-Transistor
IPD031N03L G
PG-TO252-3-11
031N03L
2)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
3)
product (FOM)
for target applications
Symbol Conditions
I
I
I
E
dv /dt
V
D
D,pulse
AS
AS
GS
IPS031N03L G
PG-TO251-3-11
031N03L
V
V
V
V
T
T
T
I
I
di /dt =200 A/µs,
T
D
D
page 1
C
C
C
j,max
GS
GS
GS
GS
=90 A, R
=90 A, V
=100 °C
=25 °C
=25 °C
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V,
=175 °C
DS
GS
C
C
=24 V,
=25 Ω
Product Summary
V
R
I
C
=25 °C
=100 °C
=25 °C
D
DS
DS(on),max
Value
400
±20
90
90
90
79
90
60
6
IPD031N03L G
IPS031N03L G
3.1
30
90
Unit
A
mJ
kV/µs
V
V
mΩ
A
2008-04-15

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IPD031N03LG Summary of contents

Page 1

Type OptiMOS ® 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...

Page 2

Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot C 100 Safe operating area I =f =25 ° parameter limited by on-state ...

Page 5

Typ. output characteristics I =f =25 ° parameter 200 4.5 V 160 120 Typ. transfer characteristics I =f |>2|I ...

Page 6

Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline Rev. 1.03 PG-TO252-3-11 page 8 IPD031N03L G IPS031N03L G 2008-04-15 ...

Page 9

Package Outline Rev. 1.03 PG-TO251-3-11 page 9 IPD031N03L G IPS031N03L G 2008-04-15 ...

Page 10

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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