IPD031N03LG Infineon Technologies, IPD031N03LG Datasheet - Page 2

MOSFET N-CH 30V 90A TO252-3

IPD031N03LG

Manufacturer Part Number
IPD031N03LG
Description
MOSFET N-CH 30V 90A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD031N03LG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
51nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 15V
Power - Max
94W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD021N03LG
IPD021N03LGINTR
IPD021N03LGINTR
IPD031N03LGXT
SP000236957

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD031N03LG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.03
2)
3)
4)
connection. PCB is vertical in still air.
5)
Maximum ratings, at T
Parameter
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
See figure 3 for more detailed information
See figure 13 for more detailed information
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
Measured from drain tab to source pin
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
5)
Symbol Conditions
Symbol Conditions
P
T
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
j
tot
(BR)DSS
GS(th)
, T
thJC
thJA
DS(on)
G
stg
T
minimal footprint
6 cm² cooling area
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
C
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=30 A
DS
=25 °C
=V
=30 V, V
=30 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
GS
, I
D
|R
D
D
=1 mA
D
=250 µA
D
GS
GS
DS
DS(on)max
=30 A
=30 A
=0 V,
=0 V,
=0 V
4)
,
min.
30
50
1
-
-
-
-
-
-
-
-
-
-55 ... 175
55/175/56
Values
Value
typ.
100
0.1
3.5
2.6
1.6
94
10
10
-
-
-
-
-
IPD031N03L G
IPS031N03L G
max.
100
100
1.6
2.2
4.4
3.1
75
50
1
-
-
-
Unit
W
°C
Unit
K/W
V
µA
nA
mΩ
S
2008-04-15

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