IPD031N03LG Infineon Technologies, IPD031N03LG Datasheet - Page 6

• Manufacturer Part Number: IPD031N03LG
• Description: MOSFET N-CH 30V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD031N03LG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 15V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD021N03LG; IPD021N03LGINTR; IPD021N03LGINTR; IPD031N03LGXT; SP000236957

Rev. 1.03
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
4
3
2
1
DS
=f(T
6
5
4
3
2
1
0
10000
1000
100
0
10
-60
); V
j
); I
GS
D
5
=0 V; f =1 MHz
-20
=30 A; V
98 %
10
20
GS
V
=10 V
T
DS
15
j
60
[°C]
Coss
typ
Ciss
[V]
Crss
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
j
GS
-20
=V
175 °C
0.5
DS
20
; I
D
=250 µA
V
25 °C
T
SD
j
1.0
60
[°C]
[V]
100
IPD031N03L G
IPS031N03L G
1.5
25 °C, 98%
175 °C, 98%
140
2008-04-15
180
2.0