FDD8770 Fairchild Semiconductor, FDD8770 Datasheet
FDD8770
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FDD8770 Summary of contents
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... Thermal Resistance, Junction to Ambient TO-252,1in θJA Package Marking and Ordering Information Device Marking Device FDD8770 FDD8770 FDU8770 FDU8770 FDU8770 FDU8770_F071 ©2006 Fairchild Semiconductor Corporation FDD8770/FDU8770 Rev. A ® MOSFET Features Max r = 4.0mΩ DS(on) Max r = 5.5mΩ DS(on) Low gate charge: Q Low gate resistance ...
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... Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 1: Pulse time < 300µs, Duty cycle = 2 Starting 0.3mH 27. FDD8770/FDU8770 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to D 25° 20V ...
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... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 120 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 100 175 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8770/FDU8770 Rev 25°C unless otherwise noted J 4 µ Figure 2. Normalized 120 160 200 Figure 4. ...
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... LIMITED BY PACKAGE 1 SINGLE PULSE OPERATION IN THIS T = MAX RATED AREA MAY LIMITED DS(on DRAIN TO SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD8770/FDU8770 Rev 25°C unless otherwise noted J 6000 V = 13V 1000 DD = 16V 100 0 Figure 8. 250 200 150 125 C J 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 1E Figure 13. Transient Thermal Response Curve FDD8770/FDU8770 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION( NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...