MOSFET N-CH 30V 80A TO-263-3

IPB034N03L G

Manufacturer Part NumberIPB034N03L G
DescriptionMOSFET N-CH 30V 80A TO-263-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPB034N03L G datasheet
 


Specifications of IPB034N03L G

Package / CaseD²Pak, TO-263 (2 leads + tab)Fet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs3.4 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)30VCurrent - Continuous Drain (id) @ 25° C80A
Vgs(th) (max) @ Id2.2V @ 250µAGate Charge (qg) @ Vgs51nC @ 10V
Input Capacitance (ciss) @ Vds5300pF @ 15VPower - Max94W
Mounting TypeSurface MountMinimum Operating Temperature- 55 C
ConfigurationSingleTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.0034 Ohm @ 10 VDrain-source Breakdown Voltage30 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current80 A
Power Dissipation94000 mWMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTDrain Source Voltage Vds30V
On Resistance Rds(on)2.8mohmRds(on) Test Voltage Vgs10V
Operating Temperature Range-55°C To +175°CTransistor Case StyleTO-263
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIPB034N03LGINTR
IPB034N03LGXT
SP000304126
  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
Page 1/10

Download datasheet (726Kb)Embed
Next
Type
3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP034N03L G
Package
PG-TO220-3-1
Marking
034N03L
Maximum ratings, at T
=25 ° C, unless otherwise specified
j
Parameter
Continuous drain current
2)
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1)
J-STD20 and JESD22
Rev. 2.0
1)
for target applications
product (FOM)
DS(on)
DS(on)
IPB034N03L G
PG-TO263-3
034N03L
Symbol Conditions
I
V
=10 V, T
D
GS
V
=10 V, T
GS
V
=4.5 V, T
GS
V
=4.5 V,
GS
T
=100 ° C
C
I
T
=25 °C
D,pulse
C
3)
I
T
=25 °C
AS
C
E
I
=80 A, R
AS
D
GS
I
=80 A, V
D
DS
dv /dt
di /dt =200 A/µs,
T
=175 ° C
j,max
V
GS
page 1
IPP034N03L G
IPB034N03L G
Product Summary
V
DS
R
DS(on),max
I
D
Value
=25 ° C
80
C
=100 ° C
80
C
=25 ° C
80
C
77
400
80
=25 W
70
=24 V,
6
±20
30
V
3.4
mW
80
A
Unit
A
mJ
kV/µs
V
2010-02-19

IPB034N03L G Summary of contents

  • Page 1

    ... DS(on) DS(on) IPB034N03L G PG-TO263-3 034N03L Symbol Conditions =100 ° =25 °C D,pulse =25 ° = = /dt di /dt =200 A/µs, T =175 ° C j,max V GS page 1 IPP034N03L G IPB034N03L G Product Summary DS(on),max I D Value =25 ° =100 ° =25 ° 400 ± 3 Unit A mJ kV/µs V 2010-02-19 ...

  • Page 2

    ... C, unless otherwise specified (BR)DSS =250 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 =30 A DS( |>2 DS(on)max = page 2 IPP034N03L G IPB034N03L G Value 94 -55 ... 175 55/175/56 Values min. typ. max 1 2 100 - 10 100 - 3.8 4.7 - 2.8 3 100 - Unit W ° C Unit K/W V µ 2010-02-19 ...

  • Page 3

    ... Rev. 2.0 Symbol Conditions C iss oss f =1 MHz C rss t d( d(off g( plateau g(sync 4 = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPP034N03L G IPB034N03L G Values min. typ. max. - 4000 5300 = 1400 1900 - 81 - 9.2 - 6 6.3 - 5.6 = 2.9 = 320 - 0.83 1 Unit 2010-02-19 ...

  • Page 4

    ... Rev. 2.0 2 Drain current I =f(T D 100 100 150 200 T [° Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 100 µ 0.1 0. [V] DS page 4 IPP034N03L G IPB034N03L 100 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 150 ...

  • Page 5

    ... Typ. transfer characteristics I =f |>2 DS(on)max parameter 160 120 Rev. 2.0 6 Typ. drain-source on resistance R DS(on) parameter: V 3 Typ. forward transconductance g =f(I fs 175 ° ° [V] GS page 5 IPP034N03L G IPB034N03L G =f =25 ° 3 =25 ° 160 120 [ 100 80 100 2010-02-19 ...

  • Page 6

    ... Rev. 2.0 10 Typ. gate threshold voltage = GS(th) typ 60 100 140 180 T [° Forward characteristics of reverse diode I =f(V F parameter: T 1000 Ciss Coss Crss [V] DS page 6 IPP034N03L G IPB034N03L G =f =250 µ 2.5 2 1.5 1 0.5 0 -60 - 100 T [° 100 25 ° C 175 ° ° C, 98% ...

  • Page 7

    ... AV GS parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 -20 20 Rev. 2.0 14 Typ. gate charge V =f(Q GS parameter ° C 100 ° [µ Gate charge waveforms Q 60 100 140 180 T [° page 7 IPP034N03L G IPB034N03L =30 A pulsed gate [nC] gate s(th (th ate 2010-02-19 ...

  • Page 8

    ... Package Outline Footprint: Rev. 2.0 PG-TO220-3-1 Packaging: page 8 IPP034N03L G IPB034N03L G 2010-02-19 ...

  • Page 9

    ... Package Outline Rev. 2.0 PG-TO263-3 page 9 IPP034N03L G IPB034N03L G 2010-02-19 ...

  • Page 10

    ... Rev. 2.0 page 10 IPP034N03L G IPB034N03L G 2010-02-19 ...