IPB034N03L G Infineon Technologies, IPB034N03L G Datasheet - Page 4

• Manufacturer Part Number: IPB034N03L G
• Description: MOSFET N-CH 30V 80A TO-263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB034N03L G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 15V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0034 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 94000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB034N03LGINTR; IPB034N03LGXT; SP000304126

Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
100
10
10
10
10
10
80
60
40
20
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
limited by on-state
resistance
C
p
=25 ° C; D =0
50
10
DC
0
T
V
C
DS
100
[° C]
[V]
10
100 µs
1
1 ms
10 ms
10 µs
150
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
100
=f(t
0.1
10
80
60
40
20
C
1
0
10
); V
p
0
0
)
-6
0.02
0.01
0.5
0.2
0.05
0.1
GS
single pulse
10
10 V
p
0
-5
/T
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
10
IPB034N03L G
IPP034N03L G
0
-2
150
10
0
-1
2010-02-19
200
10
1
0