IPB034N03L G Infineon Technologies, IPB034N03L G Datasheet - Page 6

• Manufacturer Part Number: IPB034N03L G
• Description: MOSFET N-CH 30V 80A TO-263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB034N03L G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 15V
• Power - Max: 94W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0034 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 94000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB034N03LGINTR; IPB034N03LGXT; SP000304126

Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
4
3
2
1
DS
=f(T
7
6
5
4
3
2
1
0
10000
1000
100
10
0
-60
); V
j
); I
GS
D
5
=0 V; f =1 MHz
-20
=30 A; V
98 %
10
20
GS
V
=10 V
T
DS
15
j
60
[° C]
Coss
typ
Ciss
[V]
Crss
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
j
-20
GS
175 ° C
=V
0.5
DS
20
; I
D
=250 µA
V
25 ° C
T
SD
j
1.0
60
[° C]
[V]
25 ° C, 98%
100
IPB034N03L G
IPP034N03L G
1.5
140
175 °C, 98%
2010-02-19
180
2.0