IRF630NSTRLPBF International Rectifier, IRF630NSTRLPBF Datasheet

IRF630NSTRLPBF

Manufacturer Part Number

IRF630NSTRLPBF

Description

MOSFET N-CH 200V 9.3A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF630NPBF.pdf (11 pages)

Specifications of IRF630NSTRLPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

300 mOhm @ 5.4A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

9.3A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

35nC @ 10V

Input Capacitance (ciss) @ Vds

575pF @ 25V

Power - Max

82W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

9.5 A

Power Dissipation

82 W

Mounting Style

SMD/SMT

Gate Charge Qg

23.3 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF630NSTRLPBF
IRF630NSTRLPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF630NSTRLPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF630NSTRLPBF

Quantity:

9 000

Company:

H&T Electronics

Part Number:

IRF630NSTRLPBF

Quantity:

4 000

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Description

Fifth Generation HEXFET

International Rectifier utilize advanced processing techniques

to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF630NL) is available for low-

profile application.

Absolute Maximum Ratings

www.irf.com

dv/dt

STG

Pak is suitable for high current applications because of its

@ T

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Ease of Paralleling

Simple Drive Requirements

Lead-Free

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Power MOSFETs from

Parameter

†

@ 10V

‚

„

IRF630NPbF

TO-220AB

300 (1.6mm from case )

HEXFET

10 lbf•in (1.1N•m)

-55 to +175

IRF630NSPbF

Max.

9.3

6.5

0.5

9.3

8.2

8.1

±20

Pak

IRF630NSPbF

IRF630NLPbF

Power MOSFET

DS(on)

IRF630NPbF

DSS

= 9.3A

IRF630NLPbF

PD - 95047A

= 200V

= 0.30Ω

TO-262

Units

W/°C

V/ns

°C

07/23/10

Related parts for IRF630NSTRLPBF

IRF630NSTRLPBF Summary of contents

Page 1

... Description ® Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF630N/S/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 10 5.0V BOTTOM 4.5V 1 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS 100 ° 175 C 10 ...

Page 4

IRF630N/S/LPbF 1200 0V MHZ C iss = SHORTED C rss = C gd 1000 C oss = 800 Ciss 600 Coss ...

Page 5

T , Case Temperature ( Case Temperature ( 0.50 1 0.20 0.10 ...

Page 6

IRF630N/S/LPbF D.U 20V 0.01 Ω Charge www.irf.com 200 15V 150 DRIVER + V DD 100 - ...

Page 7

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent For N-Channel HEXFET www.irf.com + • • ƒ • - „ • • • ...

Page 8

IRF630N/S/LPbF EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB package ...

Page 9

T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 SEMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. ...

Page 10

IRF630N/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE : T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASSEMBLY LINE "C" Note: "P" in assembly ...

Page 11

D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE ...

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