IPB05N03LA Infineon Technologies, IPB05N03LA Datasheet

MOSFET N-CH 25V 80A D2PAK

IPB05N03LA

Manufacturer Part Number
IPB05N03LA
Description
MOSFET N-CH 25V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB05N03LA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.6 mOhm @ 55A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 50µA
Gate Charge (qg) @ Vgs
25nC @ 5V
Input Capacitance (ciss) @ Vds
3110pF @ 15V
Power - Max
94W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IPB05N03LAINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPB05N03LA
Manufacturer:
Infineon
Quantity:
2 250
Part Number:
IPB05N03LA G
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1. 7
1)
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel - Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
IPB05N03LA G
J-STD20 and JESD22
®
2 Power-Transistor
4)
j
Package
PG-TO263
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
05N03LA
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=72 A, R
=80 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
=20 V,
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
(SMD version)
-55 ... 175
55/175/56
Value
385
190
±20
80
76
94
PG-TO263
6
IPB05N03LA G
25
4.6
80
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2006-05-10

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IPB05N03LA Summary of contents

Page 1

... I D product (FOM) Marking 05N03LA Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPB05N03LA (SMD version) 4.6 mΩ PG-TO263 Value Unit 385 190 mJ 6 kV/µs ± -55 ... 175 °C 55/175/56 2006-05-10 ...

Page 2

... (BR)DSS =50 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 = DS(on) SMD version SMD version |>2 DS(on)max = page 2 IPB05N03LA G Values Unit min. typ. max 1.6 K 1.2 1 0.1 1 µ 100 - 1 100 nA - 6.2 7.8 mΩ - 3.8 4.6 Ω 2006-05-10 ...

Page 3

... DS C oss f =1 MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPB05N03LA G Values Unit min. typ. max. - 2413 3110 pF - 921 1225 - 112 167 - 4.6 6 3.9 5.0 - 5 385 - 0.97 1 2006-05-10 ...

Page 4

... Rev Drain current I =f 100 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µs 0 0.01 0.001 10 100 10 0 [V] DS page 4 IPB05N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 single pulse 0. [s] p 200 2006-05-10 ...

Page 5

... DS D DS(on)max parameter 160 140 120 100 175 ° Rev Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 120 100 ° [V] GS page 5 IPB05N03LA =25 ° 3.8 V 3.5 V 3 100 120 I [A] D =25 ° [ 140 80 2006-05-10 ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 Crss 0.0 [V] DS page 6 IPB05N03LA 500 µA 50 µA - 100 140 T [° 175 °C 25 °C 175°C 98% 25°C 98% 0.5 1.0 1.5 V [V] SD 180 2.0 2006-05-10 ...

Page 7

... I =f parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev Typ. gate charge V =f(Q GS parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB05N03LA =40 A pulsed gate [nC] gate ate 2006-05-10 ...

Page 8

... PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines Footprint Rev Packaging page 8 IPB05N03LA G 2006-05-10 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev page 9 IPB05N03LA G 2006-05-10 ...

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