IRFH5053TRPBF International Rectifier, IRFH5053TRPBF Datasheet

MOSFET N-CH 100V 9.3A PQFN56

IRFH5053TRPBF

Manufacturer Part Number
IRFH5053TRPBF
Description
MOSFET N-CH 100V 9.3A PQFN56
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5053TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 9.3A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
9.3A
Vgs(th) (max) @ Id
4.9V @ 100µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1510pF @ 50V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-PQFN, 8-PowerQFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5053TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5053TRPBF
Manufacturer:
International Rectifier
Quantity:
25 910
Part Number:
IRFH5053TRPBF
Manufacturer:
NDK
Quantity:
4 580
Part Number:
IRFH5053TRPBF
Manufacturer:
IR
Quantity:
20 000
Applications
l
l
Benefits
l
l
l
l
l
l
l
l
www.irf.com
Notes  through
V
V
I
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
J
STG
DS
GS
D
D
θJC
θJA
@ T
@ T
@ T
3 Phase Boost Converter Applications
Secondary Side Synchronous Rectification
Very low R
Low Gate Charge
Fully Characterized Avalanche Voltage and
100% Tested for R
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
@T
@T
Current
A
A
C
A
A
= 25°C
= 70°C
= 25°C
= 25°C
= 70°C
DS(ON)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Case
Junction-to-Ambient
at 10V V
are on page 9
G
GS
Parameter
Parameter
f
g
g
g
g
GS
GS
GS
@ 10V
@ 10V
@ 10V
100V
V
DSS
Typ.
–––
–––
18m Ω @V
IRFH5053PbF
-55 to + 150
HEXFET
R
Max.
0.025
DS(on)
100
± 20
9.3
7.4
3.1
2.0
46
75
GS
max
Max.
®
D
1.6
D
40
D
= 10V
D
Power MOSFET
PQFN
Units
Units
24nC
W/°C
°C/W
12/16/08
°C
Qg
W
V
A
S
S
S
1
G

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IRFH5053TRPBF Summary of contents

Page 1

Applications 3 Phase Boost Converter Applications l Secondary Side Synchronous Rectification l Benefits Very low R at 10V V l DS(ON) GS Low Gate Charge l Fully Characterized Avalanche Voltage and l Current 100% Tested for Lead-Free ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH 4. 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

Page 5

Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 SINGLE PULSE ( THERMAL ...

Page 6

125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V D.U ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16. Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 17. Gate Charge ...

Page 8

PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) 8 XXXX XYWWX XXXXX PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 ...

Page 9

PQFN Tape and Reel Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.75mH ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Rthjc is guaranteed by ...

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