ATP106-TL-H SANYO, ATP106-TL-H Datasheet
ATP106-TL-H
Specifications of ATP106-TL-H
ATP106-SPL
Available stocks
Related parts for ATP106-TL-H
ATP106-TL-H Summary of contents
Page 1
... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP106 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...
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... See specifi ed Test Circuit =--20V =--10V =--30A Qgs V DS =--20V =--10V =--30A Qgd V DS =--20V =--10V =--30A =--30A =0V 1.5 4.6 2.6 0.4 0 Gate 0 Drain 3 : Source 4 : Drain SANYO : ATPAK V OUT ATP106 Ratings Unit min typ max --1.5 --2 mΩ mΩ 1380 pF 210 pF ...
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... 1 --0.1 --1.0 --10 Drain Current Time -- I D 1000 --20V --10V 100 (on --0.1 --1.0 --10 Drain Current ATP106 -- --10V --45 Single pulse --40 --35 --30 --25 --20 --15 --10 -- --1.6 --1.8 --2.0 0 --0.5 IT15122 60 Tc=25 ° Single pulse --12 --13 --14 --15 --16 --50 --25 IT15124 --100 --10V V GS =0V 5 Single pulse 3 Single pulse ...
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... Case Temperature °C Note on usage : Since the ATP106 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...