IPD06N03LB G Infineon Technologies, IPD06N03LB G Datasheet

MOSFET N-CH 30V 50A TO-252

IPD06N03LB G

Manufacturer Part Number
IPD06N03LB G
Description
MOSFET N-CH 30V 50A TO-252
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD06N03LB G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.1 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 40µA
Gate Charge (qg) @ Vgs
22nC @ 5V
Input Capacitance (ciss) @ Vds
2800pF @ 15V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD06N03LB G
IPD06N03LBGINTR
IPD06N03LBGXT
SP000016411
Rev. 1.9
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
IPD06N03LB G
®
2 Power-Transistor
4)
j
Package
PG-TO252-3-11
=25 °C, unless otherwise specified
DS(on)
1)
product (FOM)
for target applications
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
06N03LB
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=50 A, R
=50 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
=20 V,
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
-55 ... 175
55/175/56
Value
200
160
±20
50
50
83
PG-TO252-3
6
IPD06N03LB G
30
6.1
50
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-04-14

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IPD06N03LB G Summary of contents

Page 1

... I D product (FOM) Marking 06N03LB Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD06N03LB 6.1 mΩ PG-TO252-3 Value Unit 200 160 mJ 6 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-14 ...

Page 2

... GSS =4 =30 A DS( |>2 DS(on)max = =1.8 K/W the chip is able to carry 87 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD06N03LB G Values Unit min. typ. max 1.8 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 7.2 9.1 mΩ - 5.0 6.1 Ω ...

Page 3

... Rev. 1.9 Symbol Conditions C iss = oss f =1 MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD06N03LB G Values Unit min. typ. max. - 2100 2800 pF - 750 1000 - 97 150 - 4 3.3 4 350 - 0.92 1 2008-04-14 ...

Page 4

... V Rev. 1.9 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µ µs 100 µ 0.001 0 10 100 10 [V] DS page 4 IPD06N03LB G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 single pulse 0. [s] p 200 ...

Page 5

... V 100 Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.9 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 100 ° [V] GS page 5 IPD06N03LB =25 ° 3.2 V 3.5 V 3 [A] D =25 ° [ 100 60 2008-04-14 ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 Crss 0.0 [V] DS page 6 IPD06N03LB 400 µA 40 µA - 100 140 T [° °C, 98% 175 °C, 98% 25 °C 175 °C 0.5 1.0 1.5 V [V] SD 180 2.0 2008-04-14 ...

Page 7

... AV GS parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.9 14 Typ. gate charge V =f(Q GS parameter °C 100 °C 8 150 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD06N03LB =25 A pulsed gate [nC] gate ate 2008-04-14 ...

Page 8

... Package Outline PG-TO252-3-11: Outline Rev. 1.9 PG-TO252-3 page 8 IPD06N03LB G 2008-04-14 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.9 page 9 IPD06N03LB G 2008-04-14 ...

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