MOSFET N-CH 30V 50A TO-252

IPD06N03LB G

Manufacturer Part NumberIPD06N03LB G
DescriptionMOSFET N-CH 30V 50A TO-252
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPD06N03LB G datasheet
 


Specifications of IPD06N03LB G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs6.1 mOhm @ 50A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C50AVgs(th) (max) @ Id2V @ 40µA
Gate Charge (qg) @ Vgs22nC @ 5VInput Capacitance (ciss) @ Vds2800pF @ 15V
Power - Max83WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIPD06N03LB G
IPD06N03LBGINTR
IPD06N03LBGXT
SP000016411
  
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OptiMOS
®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
DS(on)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Type
Package
IPD06N03LB G
PG-TO252-3-11
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
4)
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.9
Product Summary
V
DS
R
DS(on),max
1)
for target applications
I
D
product (FOM)
Marking
06N03LB
Symbol Conditions
2)
I
T
=25 °C
D
C
T
=100 °C
C
3)
I
T
=25 °C
D,pulse
C
=25 Ω
E
I
=50 A, R
AS
D
GS
I
=50 A, V
=20 V,
D
DS
dv /dt
di /dt =200 A/µs,
T
=175 °C
j,max
V
GS
P
T
=25 °C
tot
C
T
, T
j
stg
page 1
IPD06N03LB G
30
V
6.1
mΩ
50
A
PG-TO252-3
Value
Unit
50
A
50
200
160
mJ
6
kV/µs
±20
V
83
W
-55 ... 175
°C
55/175/56
2008-04-14

IPD06N03LB G Summary of contents

  • Page 1

    ... I D product (FOM) Marking 06N03LB Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD06N03LB 6.1 mΩ PG-TO252-3 Value Unit 200 160 mJ 6 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-14 ...

  • Page 2

    ... GSS =4 =30 A DS( |>2 DS(on)max = =1.8 K/W the chip is able to carry 87 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD06N03LB G Values Unit min. typ. max 1.8 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 7.2 9.1 mΩ - 5.0 6.1 Ω ...

  • Page 3

    ... Rev. 1.9 Symbol Conditions C iss = oss f =1 MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD06N03LB G Values Unit min. typ. max. - 2100 2800 pF - 750 1000 - 97 150 - 4 3.3 4 350 - 0.92 1 2008-04-14 ...

  • Page 4

    ... V Rev. 1.9 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µ µs 100 µ 0.001 0 10 100 10 [V] DS page 4 IPD06N03LB G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 single pulse 0. [s] p 200 ...

  • Page 5

    ... V 100 Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.9 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 100 ° [V] GS page 5 IPD06N03LB =25 ° 3.2 V 3.5 V 3 [A] D =25 ° [ 100 60 2008-04-14 ...

  • Page 6

    ... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 Crss 0.0 [V] DS page 6 IPD06N03LB 400 µA 40 µA - 100 140 T [° °C, 98% 175 °C, 98% 25 °C 175 °C 0.5 1.0 1.5 V [V] SD 180 2.0 2008-04-14 ...

  • Page 7

    ... AV GS parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.9 14 Typ. gate charge V =f(Q GS parameter °C 100 °C 8 150 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD06N03LB =25 A pulsed gate [nC] gate ate 2008-04-14 ...

  • Page 8

    ... Package Outline PG-TO252-3-11: Outline Rev. 1.9 PG-TO252-3 page 8 IPD06N03LB G 2008-04-14 ...

  • Page 9

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.9 page 9 IPD06N03LB G 2008-04-14 ...