IPD06N03LB G Infineon Technologies, IPD06N03LB G Datasheet - Page 8

• Manufacturer Part Number: IPD06N03LB G
• Description: MOSFET N-CH 30V 50A TO-252
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD06N03LB G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.1 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 40µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 2800pF @ 15V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD06N03LB G; IPD06N03LBGINTR; IPD06N03LBGXT; SP000016411

IPD06N03LB G
Package Outline
PG-TO252-3
PG-TO252-3-11: Outline
Rev. 1.9
page 8
2008-04-14