IRFR020TRPBF | |
|---|---|
| Manufacturer Part Number | IRFR020TRPBF |
| Description | MOSFET N-CH 60V 14A DPAK |
| Manufacturer | Vishay |
| IRFR020TRPBF datasheets |
|
Availability: In stock
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Warranty: 60 days
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IRFR020TRPBF cross reference pin-to-pin replacement | ||||||
|---|---|---|---|---|---|---|
| Part number | Manufacturer | Vds | Id | Package | Configuration | Datasheet |
 AP9977GH-HF |
Advanced Power Electronics Corp. | 60V | 11A | TO-252 | Single N | AP9977GH-HF.pdf |
 AP9973GH-HF |
Advanced Power Electronics Corp. | 60V | 14A | TO-252 | Single N | AP9973GH-HF.pdf |
Specifications of IRFR020TRPBF | |||
|---|---|---|---|
| Fet Type | MOSFET N-Channel, Metal Oxide | Fet Feature | Standard |
| Rds On (max) @ Id, Vgs | 100 mOhm @ 8.4A, 10V | Drain To Source Voltage (vdss) | 60V |
| Current - Continuous Drain (id) @ 25° C | 14A | Vgs(th) (max) @ Id | 4V @ 250µA |
| Gate Charge (qg) @ Vgs | 25nC @ 10V | Input Capacitance (ciss) @ Vds | 640pF @ 25V |
| Power - Max | 2.5W | Mounting Type | Surface Mount |
| Package / Case | DPak, TO-252 (2 leads+tab), SC-63 | Transistor Polarity | N Channel |
| Continuous Drain Current Id | 14A | Drain Source Voltage Vds | 60V |
| On Resistance Rds(on) | 100mohm | Rds(on) Test Voltage Vgs | 10V |
| Leaded Process Compatible | Yes | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Other names | IRFR020PBFTR IRFR020TRPBF IRFR020TRPBFTR | ||
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IRFR020, IRFU020, SiHFR020, SiHFU020
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
a
(PCB Mount)
Maximum Junction-to-Case (Drain)
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS T
= 25 °C, unless otherwise noted
J
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Temperature Coefficient
DS
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
SYMBOL
MIN.
TYP.
R
-
thJA
R
-
thJA
R
-
thJC
SYMBOL
TEST CONDITIONS
V
V
= 0 V, I
= 250 μA
DS
GS
D
ΔV
/T
Reference to 25 °C, I
DS
J
D
V
V
= V
, I
= 250 μA
GS(th)
DS
GS
D
I
V
= ± 20 V
GSS
GS
V
= 60 V, V
= 0 V
DS
GS
I
DSS
V
= 48 V, V
= 0 V, T
DS
GS
R
V
= 10 V
I
= 8.4 A
DS(on)
GS
D
g
V
= 25 V, I
= 8.4 A
fs
DS
D
C
iss
V
= 0 V,
GS
C
V
= 25 V,
oss
DS
f = 1.0 MHz, see fig. 5
C
rss
Q
g
I
= 17 A, V
D
Q
V
= 10 V
gs
GS
see fig. 6 and 13
Q
gd
t
d(on)
t
V
= 30 V, I
= 17 A,
r
DD
D
= 18 Ω, R
= 1.7 Ω, see fig. 10
R
t
G
D
d(off)
t
f
Between lead,
L
D
6 mm (0.25") from
package and center of
L
c
die contact
S
MOSFET symbol
I
S
showing the
integral reverse
I
SM
p - n junction diode
V
T
= 25 °C, I
= 14 A, V
SD
J
S
t
rr
T
= 25 °C, I
= 17 A, dI/dt = 100 A/μs
J
F
Q
rr
t
Intrinsic turn-on time is negligible (turn-on is dominated by L
on
MAX.
UNIT
-
110
-
50
°C/W
-
3.0
MIN.
TYP.
MAX.
60
-
-
= 1 mA
-
0.073
-
2.0
-
4.0
-
-
± 100
-
-
25
= 125 °C
-
-
250
J
b
-
-
0.10
6.2
-
-
-
640
-
-
360
-
-
79
-
-
-
25
= 48 V,
DS
-
-
5.8
b
-
-
11
-
13
-
-
58
-
b
-
25
-
-
42
-
D
-
4.5
-
G
-
7.5
-
S
-
-
14
D
G
-
-
56
S
b
= 0 V
-
-
1.5
GS
-
88
180
b
-
0.29
0.64
and L
S
Document Number: 90335
S10-1122-Rev. B, 10-May-10
UNIT
V
V/°C
V
nA
μA
Ω
S
pF
nC
ns
nH
A
V
ns
μC
)
D
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