MOSFET N-CH 60V 14A DPAK

 

IRFR020TRPBF

Manufacturer Part NumberIRFR020TRPBF
DescriptionMOSFET N-CH 60V 14A DPAK
ManufacturerVishay
IRFR020TRPBF datasheets

Availability: In stock

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

 

Specifications of IRFR020TRPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs100 mOhm @ 8.4A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C14AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs25nC @ 10VInput Capacitance (ciss) @ Vds640pF @ 25V
Power - Max2.5WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Transistor PolarityN Channel
Continuous Drain Current Id14ADrain Source Voltage Vds60V
On Resistance Rds(on)100mohmRds(on) Test Voltage Vgs10V
Leaded Process CompatibleYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIRFR020PBFTR
IRFR020TRPBF
IRFR020TRPBFTR
  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 7/8

Download datasheet (971Kb)Embed
PrevNext
D.U.T.
+
-
R
g
Driver gate drive
D.U.T. l
Reverse
recovery
current
D.U.T. V
Re-applied
voltage
Inductor current
Note
a. V
GS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90335.
Document Number: 90335
S10-1122-Rev. B, 10-May-10
IRFR020, IRFU020, SiHFR020, SiHFU020
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
• dV/dt controlled by R
g
• Driver same type as D.U.T.
• I
controlled by duty factor “D”
SD
• D.U.T. - device under test
P.W.
Period
D =
Period
P.W.
waveform
SD
Body diode forward
current
dI/dt
waveform
DS
Diode recovery
dV/dt
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix
+
+
V
DD
-
a
V
= 10 V
GS
V
DD
I
SD
www.vishay.com
7