IPP100N06S3L-04 Infineon Technologies, IPP100N06S3L-04 Datasheet
IPP100N06S3L-04
Specifications of IPP100N06S3L-04
IPP100N06S3L-04IN
IPP100N06S3L04X
IPP100N06S3L04XK
SP000102209
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IPP100N06S3L-04 Summary of contents
Page 1
... Marking 3PN06L04 3PN06L04 3PN06L04 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value =10 V 100 100 400 1090 100 ±16 214 -55 ... +175 55/175/ 3.5 m 100 A Unit °C 2007-11-07 ...
Page 2
... =150 µA GS(th = DSS T =25 ° = =125 ° = GSS =59 A DS(on = SMD version SMD version page 2 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 Values min. typ. max 0 1.2 1 100 = 100 - 4.9 6.2 - 4.6 5.9 - 3.1 3.8 - 2.8 3.5 Unit K µ 2007-11-07 ...
Page 3
... S T =25 ° S,pulse = =25 ° =27 /dt =100 A/µ 0.7 K/W the chip is able to carry 176 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 Values min. typ. max. - 17270 = 2165 - 2070 - 241 - 3 0.6 0.9 ...
Page 4
... V DS Rev. 1.1 2 Drain current I =f 120 100 150 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-11-07 ...
Page 5
... GS DS parameter 200 150 100 Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 4 3 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 6 -55 °C 25 °C 5 175 ° [V] page 5 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L- ° 3 [ -60 - 100 T [° 100 120 140 180 2007-11-07 ...
Page 6
... V SD Rev. 1.1 10 Typ. capacitances 1500µ 100 140 180 12 Typ. avalanche characteristics parameter: T 1000 100 25 ° 0.8 1 1.2 1.4 [V] page 6 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L- MHz DS GS Ciss Coss Crss [ j(start) 100°C 150° 100 t [µ 25°C 1000 2007-11-07 ...
Page 7
... T [° Typ. gate charge pulsed GS gate D parameter 100 150 Q gate Rev. 1.1 14 Drain-source breakdown voltage V BR(DSS 150 200 16 Gate charge waveforms 200 250 300 350 [nC] page 7 IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L- -60 - 100 T [° 140 180 Q Q gate gate 2007-11-07 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI100N06S3L-04, IPP100N06S3L-04 page 8 IPB100N06S3L-04 2007-11-07 ...
Page 9
... Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Rev. 1.1 IPI100N06S3L-04, IPP100N06S3L-04 Date 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 07.11.2007 07.11.2007 07 ...