IPP100N06S3L-04 Infineon Technologies, IPP100N06S3L-04 Datasheet - Page 4

• Manufacturer Part Number: IPP100N06S3L-04
• Description: MOSFET N-CH 55V 100A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N06S3L-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 150µA
• Gate Charge (qg) @ Vgs: 362nC @ 10V
• Input Capacitance (ciss) @ Vds: 17270pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP100N06S3L-04; IPP100N06S3L-04IN; IPP100N06S3L04X; IPP100N06S3L04XK; SP000102209

Rev. 1.1
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
250
200
150
100
100
50
10
DS
0
1
C
0.1
0
); T
); V
C
p
GS
=25 °C; D =0
≥ 4 V
50
1
T
V
C
DS
100
[°C]
[V]
1 ms
10
100 µs
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
120
100
=f(t
10
10
10
10
80
60
40
20
C
0
-1
-2
-3
0
); V
10
p
0
)
0.01
-6
0.05
0.5
0.1
IPI100N06S3L-04, IPP100N06S3L-04
GS
single pulse
≥ 4 V
10
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPB100N06S3L-04
10
-2
150
10
2007-11-07
-1
200
10
0