IPD04N03LB G Infineon Technologies

IPD04N03LB G

Manufacturer Part Number

IPD04N03LB G

Description

MOSFET N-CH 30V 50A TO-252

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Specifications of IPD04N03LB G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.1 mOhm @ 50A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

50A

Vgs(th) (max) @ Id

2V @ 70µA

Gate Charge (qg) @ Vgs

40nC @ 5V

Input Capacitance (ciss) @ Vds

5200pF @ 15V

Power - Max

115W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

5.8 Ohms

Forward Transconductance Gfs (max / Min)

102 S / 51 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

50 A

Power Dissipation

115 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IPD04N03LB G
IPD04N03LBGINTR
IPD04N03LBGXT
SP000016409

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