IPP100N10S3-05 Infineon Technologies, IPP100N10S3-05 Datasheet
IPP100N10S3-05
Specifications of IPP100N10S3-05
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IPP100N10S3-05 Summary of contents
Page 1
... Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =50A =25 °C tot stg page 1 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value =10 V 100 100 400 1445 100 ±20 300 -55 ... +175 55/175/56 100 V 4.8 m 100 A Unit °C 2008-02-11 ...
Page 2
... =240µA GS(th = DSS T =25 ° = =125 ° =20V, V =0V GSS =10V, I =100A DS(on =10V, I =100A SMD version page 2 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Values min. typ. max 0 100 - 2.0 3 100 - - 100 - 4.3 5.1 - 4.0 4.8 Unit K µ 2008-02-11 ...
Page 3
... S,pulse V =0V, I =80A =25° =50V /dt =100A/µ 0.5K/W the chip is able to carry 165A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Values min. typ. max. - 8900 11570 pF - 2520 3276 - 220 - = 135 - 5.5 ...
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... V DS Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3- ≥ SMD 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-02-11 ...
Page 5
... Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 8.5 7.5 6.5 5.5 4.5 3.5 -55 °C 2 [V] page 5 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3- °C; SMD 5 100 120 140 160 180 I [ 100 SMD -60 - 100 T [° 6 140 180 2008-02-11 ...
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... Rev. 1.0 10 Typ. capacitances C = f(V 10 1200 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 1000 100 25 °C 25 ° 0.8 0 1.2 1.2 1.4 1.4 [V] [V] page 6 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3- MHz [ j(start) 150 °C 0 [µs] AV Ciss Coss Crss °C 100 °C 100 ...
Page 7
... Typ. gate charge 100 A pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS) 115 110 105 100 95 90 125 175 16 Gate charge waveforms s(th (th) 80 100 120 140 [nC] page 7 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3- -55 - 105 T [° 145 Q gate 2008-02-11 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI100N10S3-05, IPP100N10S3-05 page 8 IPB100N10S3-05 2008-02-11 ...
Page 9
... Revision History Version Rev. 1.0 IPI100N10S3-05, IPP100N10S3-05 Date page 9 IPB100N10S3-05 Changes 2008-02-11 ...