IPP100N10S3-05 Infineon Technologies, IPP100N10S3-05 Datasheet - Page 6

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IPP100N10S3-05

Manufacturer Part Number
IPP100N10S3-05
Description
MOSFET N-CH 100V 100A T0220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N10S3-05

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.1 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 240µA
Gate Charge (qg) @ Vgs
176nC @ 10V
Input Capacitance (ciss) @ Vds
11570pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000407126

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP100N10S3-05
Manufacturer:
INFINEON
Quantity:
4 000
Rev. 1.0
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
3
3
2
2
1
1
0
0
SD
-60
0
0
)
j
); V
D
j
0.2
0.2
-20
GS
= V
0.4
0.4
20
DS
175 °C
175 °C
240 µA
0.6
0.6
V
V
T
SD
SD
j
60
[°C]
25 °C
25 °C
[V]
[V]
0.8
0.8
1200 µA
100
1
1
140
1.2
1.2
180
1.4
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
A S
= f(t
1000
100
10
10
10
10
10
1
4
3
2
1
AV
DS
0.1
0
)
); V
j(start)
GS
IPI100N10S3-05, IPP100N10S3-05
5
= 0 V; f = 1 MHz
1
10
V
t
AV
DS
15
10
[µs]
[V]
150 °C
IPB100N10S3-05
20
100
100 °C
25
2008-02-11
Coss
25 °C
Crss
Ciss
1000
30

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