IPP100N10S3-05 Infineon Technologies, IPP100N10S3-05 Datasheet - Page 7

• Manufacturer Part Number: IPP100N10S3-05
• Description: MOSFET N-CH 100V 100A T0220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N10S3-05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 240µA
• Gate Charge (qg) @ Vgs: 176nC @ 10V
• Input Capacitance (ciss) @ Vds: 11570pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000407126

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
3500
3000
2500
2000
1500
1000
500
10
9
8
7
6
5
4
3
2
1
0
0
0
25
j
)
gate
D
); I
DD
20
D
25 A
50 A
100 A
= 100 A pulsed
40
75
Q
60
gate
T
j
[°C]
[nC]
80
20 V
125
100
120
80 V
140
175
page 7
14 Typ. drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
115
110
105
100
V
95
90
g (th)
g s(th)
GS
= f(T
-55
j
IPI100N10S3-05, IPP100N10S3-05
); I
Q
-15
g s
D
= 1 mA
25
Q
T
g
Q
j
[°C]
65
sw
Q
g d
IPB100N10S3-05
105
2008-02-11
145
Q
gate