MTP2P50EG ON Semiconductor, MTP2P50EG Datasheet
MTP2P50EG
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MTP2P50EG Summary of contents
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... 0.6 W/° −55 to 150 °C J stg °C/W R 1.67 qJC R 62.5 qJA T 260 °C L Device MTP2P50EG 1 http://onsemi.com 2 AMPERES, 500 VOLTS DS(on) P−Channel MARKING DIAGRAM AND PIN ASSIGNMENT 4 Drain 4 TO−220AB MTP CASE 221A 2P50EG STYLE 5 AYWW Gate Source 2 Drain MTP2P50E = Device Code ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 500 Vdc Vdc 500 Vdc, ...
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TYPICAL ELECTRICAL CHARACTERISTICS 25° 3.5 3 2.5 2 1 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
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TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...
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SINGLE PULSE T = 25° 100 0.1 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...