IRF7665S2TR1PBF International Rectifier, IRF7665S2TR1PBF Datasheet

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IRF7665S2TR1PBF

Manufacturer Part Number
IRF7665S2TR1PBF
Description
MOSFET N-CH 100V 4.1A DFET SB
Manufacturer
International Rectifier

Specifications of IRF7665S2TR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
62 mOhm @ 8.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.1A
Vgs(th) (max) @ Id
5V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
515pF @ 25V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric SB
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
14.4 A
Power Dissipation
30 W
Gate Charge Qg
8.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7665S2TR1PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7665S2TR1PBF
Manufacturer:
NSC
Quantity:
4 414
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
Notes  through
www.irf.com
Features
• Key parameters optimized for Class-D audio amplifier
• Low R
• Low Q
• Low Q
• Low package stray inductance for reduced ringing and lower
• Can deliver up to 100W per channel into 8Ω with no heatsink Š
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
· Lead-Free (Qualified up to 260°C Reflow)
· Industrial Qualified
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF7665S2TR/TR1PbF device utilizes DirectFET
parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance im-
proves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red
or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and
processes. The DirectFET
thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable
device for Class-D audio amplifier applications.
V
V
I
I
I
I
P
P
P
T
T
R
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
EMI
J
STG
DS
GS
D
D
D
θJA
θJA
θJA
θJ-Can
θJ-PCB
applications
@ T
@ T
@ T
@T
@T
@T
SB
C
C
A
C
C
A
= 25°C
= 100°C
= 25°C
DS(on)
rr
= 25°C
g
= 25°C
= 100°C
for better THD and improved efficiency
for better THD and lower EMI
for improved efficiency
SC
Š
are on page 2
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
TM
package also allows dual sided cooling to maximize thermal transfer in power systems, improving
jk
j
j
Parameter
Parameter
e
h
i
M2
GS
GS
GS
TM
@ 10V
@ 10V
@ 10V
packaging technology. DirectFET
M4
V
R
Q
R
DS
DS(on)
g
G(int)
typ.
Typ.
12.5
–––
–––
1.4
20
IRF7665S2TR1PbF
typ.
SB
typ. @ V
IRF7665S2TRPbF
L4
-55 to + 175
Max.
Key Parameters
± 20
14.4
10.2
TM
100
4.1
2.4
0.2
58
30
15
packaging technology offers lower
GS
= 10V
L6
Max.
–––
–––
–––
5.0
63
DirectFET™ ISOMETRIC
100
L8
8.3
3.5
51
TM
package is
Units
Units
W/°C
°C/W
°C
W
V
A
07/02/09
m
nC
V
1

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IRF7665S2TR1PBF Summary of contents

Page 1

... TM packaging technology. DirectFET Parameter @ 10V GS @ 10V GS @ 10V jà Parameter Typ. e ––– ––– 1.4 IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 V m typ 10V 51 GS 8.3 nC typ. 3.5 DirectFET™ ISOMETRIC packaging technology offers lower TM package is Max. Units 100 V ± ...

Page 2

IRF7665S2TR/TR1PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 10 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V 1 0.1 0.01 5.0V ≤ 60µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 10 ...

Page 4

IRF7665S2TR/TR1PbF 100 -40° 25° 175° 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward ...

Page 5

Vgs = 10V 280 240 200 125°C 160 120 25° Drain Current (A) Fig 12. On-Resistance vs. Gate Voltage 15V ...

Page 6

IRF7665S2TR/TR1PbF Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 17a. Gate Charge Test Circuit + ‚ -  Driver Gate Drive D.U.T. ...

Page 7

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations www.irf.com IRF7665S2TR/TR1PbF GATE D = DRAIN S = SOURCE ...

Page 8

IRF7665S2TR/TR1PbF ™ Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC CODE MAX MIN MIN MAX 4.85 A 4.75 0.187 0.191 B 3.70 3.95 0.146 0.156 2.85 0.108 C ...

Page 9

DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts.IRF7665S2 IRF7665S2PbF REEL DIMENSIONS STANDARD OPTION (QTY 4800) METRIC IMPERIAL MIN CODE MIN MAX A 12.992 330.0 N.C B 20.2 N.C 0.795 ...

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