STB11NK50ZT4 STMicroelectronics, STB11NK50ZT4 Datasheet

MOSFET N-CH 500V 10A D2PAK

STB11NK50ZT4

Manufacturer Part Number
STB11NK50ZT4
Description
MOSFET N-CH 500V 10A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STB11NK50ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1390pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.52 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
77 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
480mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2451-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB11NK50ZT4
Manufacturer:
ST
Quantity:
995
Part Number:
STB11NK50ZT4
Manufacturer:
STM
Quantity:
9
Part Number:
STB11NK50ZT4
Manufacturer:
ST
Quantity:
200
Features
Application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Table 1.
May 2008
STP11NK50ZFP
STB11NK50Z
STP11NK50Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Switching applications
STP11NK50ZFP
STB11NK50ZT4
Type
STP11NK50Z
Order codes
N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D
Device summary
500 V
500 V
500 V
V
DSS
< 0.52 Ω 10 A 125 W
< 0.52 Ω 10 A
< 0.52 Ω 10 A 125 W
R
Zener-protected SuperMESH
max
DS(on)
P11NK50ZFP
B11NK50Z
P11NK50Z
Marking
I
D
STB11NK50Z - STP11NK50ZFP
30 W
Pw
Rev 6
Figure 1.
TO-220
TO-220FP
Package
TO-220
D²PAK
1
2
Internal schematic diagram
3
TM
D
2
STP11NK50Z
PAK
Power MOSFET
1
3
Tape and reel
Packaging
Tube
Tube
TO-220FP
www.st.com
2
PAK
1
2
1/16
3
16

Related parts for STB11NK50ZT4

STB11NK50ZT4 Summary of contents

Page 1

... The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Table 1. Device summary Order codes STB11NK50ZT4 STP11NK50ZFP STP11NK50Z May 2008 STB11NK50Z - STP11NK50ZFP TO-220 Figure 1 ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB11NK50Z - STP11NK50ZFP - STP11NK50Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f t Off-voltage rise time r(Voff) t Fall time f Cross-over time t ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK Figure 4. Safe operating area for TO-220FP Figure 6. Output characteristics 6/16 STB11NK50Z - STP11NK50ZFP - STP11NK50Z Figure 3. Thermal impedance for TO-220 / D²PAK ...

Page 7

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Figure 8. Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 9. Static drain-source on resistance Figure 13. Normalized on resistance ...

Page 8

Electrical characteristics Figure 14. Source-drain diode forward characteristics Figure 16. Maximum avalanche energy vs temperature 8/16 STB11NK50Z - STP11NK50ZFP - STP11NK50Z Figure 15. Normalized B VDSS vs temperature ...

Page 9

STB11NK50Z - STP11NK50ZFP - STP11NK50Z 3 Test circuit Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load switching and diode recovery times Figure 21. Unclamped inductive waveform Figure 18. Gate charge test circuit ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 11

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 ...

Page 12

Package mechanical data Dim Dia 12/16 STB11NK50Z - STP11NK50ZFP - STP11NK50Z TO-220FP mechanical data mm. Min. Typ Max. 4.40 4.60 2.5 2.7 2.5 2.75 ...

Page 13

STB11NK50Z - STP11NK50ZFP - STP11NK50Z Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 ...

Page 14

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 15

STB11NK50Z - STP11NK50ZFP - STP11NK50Z 6 Revision history Table 10. Revision history Date 08-Sep-2005 14-Oct-2005 26-Mar-2006 29-Apr-2008 Revision 3 Complete version with curves 4 Inserted ecopack indication 5 New template, no content change 6 I value changed in GSS Revision ...

Page 16

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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