FDMS2734 Fairchild Semiconductor, FDMS2734 Datasheet

MOSFET N-CH 250V 2.8A POWER56

FDMS2734

Manufacturer Part Number
FDMS2734
Description
MOSFET N-CH 250V 2.8A POWER56
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of FDMS2734

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
122 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
2365pF @ 100V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
122 Ohms
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS2734TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS2734
Manufacturer:
FSC
Quantity:
21 400
Company:
Part Number:
FDMS2734
Quantity:
12 000
Company:
Part Number:
FDMS2734
Quantity:
1 200
©2011 Fairchild Semiconductor Corporation
FDMS2734 Rev.C1
FDMS2734
N-Channel UltraFET Trench
250V, 14A, 122m:
Features
„ Max r
„ Max r
„ Low Miller Charge
„ Optimized efficiency at high frequencies
„ RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
TJC
TJA
, T
Symbol
Device Marking
STG
FDMS2734
DS(on)
DS(on)
Pin 1
= 122m: at V
= 130m: at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Power 56 (Bottom view)
D
GS
GS
S
D
= 10V, I
= 6V, I
FDMS2734
-Continuous
S
Device
-Pulsed
D
S
D
D
D
= 2.8A
= 1.7A
G
T
A
= 25°C unless otherwise noted
Parameter
Power 56
Package
®
1
MOSFET
T
T
T
T
General Description
UItraFET
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.
Application
„ DC - DC Conversion
A
D
D
D
D
C
C
A
= 25°C
= 25°C
= 25°C
= 25°C
5
6
7
8
Reel Size
devices
13’’
DS(on)
(Note 1a)
(Note 1a)
(Note 1a)
, low ESR, low total and Miller gate charge,
combine
Tape Width
12mm
characteristics
4
3
2
1
-55 to +150
Ratings
S
S
G
S
250
±20
1.6
2.8
2.5
14
78
50
30
www.fairchildsemi.com
March 2011
3000 units
that
Quantity
Units
enable
°C/W
°C
W
V
V
A

Related parts for FDMS2734

FDMS2734 Summary of contents

Page 1

... Thermal Resistance, Junction to Case TJC R Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device FDMS2734 FDMS2734 ©2011 Fairchild Semiconductor Corporation FDMS2734 Rev.C1 ® MOSFET General Description = 2.8A UItraFET D benchmark efficiency in power conversion applications. = 1.7A D Optimized for r these devices are ideal for high frequency converters. ...

Page 2

... Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes determined with the device mounted TJA by the user's board design. 2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. FDMS2734 Rev. 25°C unless otherwise noted J Test Conditions I = 250PA 250PA, referenced to 25° ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 16 P PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS2734 Rev. 25°C unless otherwise noted 4. 400 320 240 160 100 125 150 ( - 0.1 ...

Page 4

... Switching Capability THIS AREA IS 0.1 LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED J 0. 125 C 0.001 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS2734 Rev. 25°C unless otherwise noted J 3000 1000 V = 125V 175V DD 100 10 0 0.1 0.5 Figure 10. 3000 1000 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 SINGLE PULSE 1E FDMS2734 Rev. 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK TJA TJA www.fairchildsemi.com ...

Page 6

... FDMS2734 Rev.C1 6 www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS2734 Rev.C1 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

Related keywords