FDMS2734 Fairchild Semiconductor, FDMS2734 Datasheet - Page 3

• Manufacturer Part Number: FDMS2734
• Description: MOSFET N-CH 250V 2.8A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDMS2734

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 122 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2365pF @ 100V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 122 Ohms
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2734TR

FDMS2734 Rev.C1
Typical Characteristics
30
25
20
15
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
5
0
16
12
8
4
0
0
Figure 3. Normalized On Resistance
-75
Figure 1.
2
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
D
-50
GS
V
= 2.8A
vs Junction Temperature
DS
= 10V
V
T
1
J
GS
, DRAIN TO SOURCE VOLTAGE (V)
-25
, JUNCTION TEMPERATURE
, GATE TO SOURCE VOLTAGE (V)
On Region Characteristics
3
V
GS
0
T
= 10V
J
2
= 150
25
P
P
s
s
o
C
4
50
T
3
J
= 25°C unless otherwise noted
75
V
T
100 125 150
GS
5
V
(
J
4
T
V
o
GS
= 25
J
GS
C
= 4.5V
= -55
)
= 6V
= 5V
o
C
o
C
5
6
3
1E-3
0.01
400
320
240
160
0.1
10
20
80
1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.0
4
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
T
SD
J
= 0V
V
= 150
0.2
, BODY DIODE FORWARD VOLTAGE (V)
GS
5
, GATE TO SOURCE VOLTAGE (V)
Normalized On-Resistance
o
On-Resistance vs Gate to
I
C
I
D
D
Source Voltage
V
Source to Drain Diode
, DRAIN CURRENT(A)
= 7A
GS
0.4
6
10
= 4.5V
0.6
15
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
0.8
T
T
8
J
J
20
V
= 25
= 150
GS
V
V
= 5V
GS
GS
o
T
T
C
J
o
J
1.0
www.fairchildsemi.com
= 6V
C
= 10V
= 25
= -55
25
o
o
C
P
C
P
s
s
1.2
10
30