IRF7769L2TR1PBF International Rectifier, IRF7769L2TR1PBF Datasheet

MOSFET N-CH 100V 375A DIRECTFET

IRF7769L2TR1PBF

Manufacturer Part Number
IRF7769L2TR1PBF
Description
MOSFET N-CH 100V 375A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7769L2TR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 74A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
11560pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
124 A
Power Dissipation
125 W
Gate Charge Qg
200 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7769L2TR1PBFTR
l
l
l
l
l
l
l
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l
l

ƒ
Applicable DirectFET Outline and Substrate Outline 
Description
The IRF7769L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
achieve the lowest on-state resistance in a package that has a footprint smaller than a D
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7769L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
www.irf.com
V
V
I
I
I
I
I
E
I
Absolute Maxim um Ratings
D
D
D
D
DM
AR
Primary Switch Socket
DS
GS
AS
RoHS Compliant, Halogen Free 
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
Industrial Qualified
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
@ T
SB
12.00
10.00
C
C
A
C
8.00
6.00
4.00
2.00
0.00
= 25°C
= 100°C
= 25°C
= 25°C
Fig 1. Typical On-Resistance vs. Gate Voltage
2.0
SC
4.0
V GS , Gate-to-Source Voltage (V)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
6.0
8.0
10.0 12.0 14.0 16.0
Ã
T J = 125°C
T J = 25°C
I D = 74A
Parameter
GS
GS
GS
GS
M2
@ 10V
@ 10V
@ 10V
@ 10V
h
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
(Package Limited)
M4
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
T
C
e
measured with thermocouple mounted to top (Drain) of part.
3.10
3.00
2.90
2.80
J
20
= 25°C, L = 0.09mH, R
2
Fig 2. Typical On-Resistance vs. Drain Current
D
PAK and only 0.7 mm profile. The DirectFET package
T A = 25°C
G
100V min ±20V max
DirectFET™ Power MOSFET ‚
Q
200nC
L4
V
L8
S
S
S
S
g tot
DSS
40
IRF7769L2TR1PbF
I D , Drain Current (A)
IRF7769L2TRPbF
S
S
S
S
Max.
100
124
375
500
260
±20
88
20
74
D
L6
110nC
G
60
V
Q
= 25Ω, I
GS
gd
V GS = 7.0V
V GS = 10V
V GS = 15V
V GS = 8.0V
DirectFET™ ISOMETRIC
AS
L8
80
= 74A.
2.8mΩ@ 10V
PD -
TM
R
V
2.7V
packaging to
DS(on)
gs(th)
97413B
Units
mJ
100
2/2/2010
V
A
A
1

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IRF7769L2TR1PBF Summary of contents

Page 1

... Fig 2. Typical On-Resistance vs. Drain Current „ T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 0.09mH 97413B IRF7769L2TRPbF IRF7769L2TR1PbF DirectFET™ Power MOSFET ‚ DSS GS DS(on) 100V min ±20V max 2.8mΩ@ 10V tot ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D C Power Dissipation 100° Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH 3. 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 25V ≤ 60µs PULSE WIDTH 100 10 1 0.1 2.0 ...

Page 5

175° 25° -40°C 1 0.1 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 125 100 ...

Page 6

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 280 TOP Single ...

Page 7

D DUT 20K Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking Note: For the most current drawing please refer to IR website at www.irf.com DIMENSIONS METRIC IMPERIAL CODE MAX MIN MIN MAX 9.15 0.356 ...

Page 10

DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: CONTROLLING DIMENSIONS NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7769L2PBF). REEL DIMENSIONS STANDARD OPTION (QTY 4000) METRIC IMPERIAL CODE MIN MAX MIN ...

Page 11

... Part number Package Type IRF7769L2TRPbF DirectFET2 Large Can IRF7769L2TR1PbF DirectFET2 Large Can † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. ...

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