MOSFET N-CH 100V 375A DIRECTFET

IRF7769L2TR1PBF

Manufacturer Part NumberIRF7769L2TR1PBF
DescriptionMOSFET N-CH 100V 375A DIRECTFET
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7769L2TR1PBF datasheet
 


Specifications of IRF7769L2TR1PBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.5 mOhm @ 74A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C375AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs300nC @ 10VInput Capacitance (ciss) @ Vds11560pF @ 25V
Power - Max3.3WMounting TypeSurface Mount
Package / CaseDirectFET™ Isometric L8Transistor PolarityN-Channel
Drain-source Breakdown Voltage100 VGate-source Breakdown Voltage20 V
Continuous Drain Current124 APower Dissipation125 W
Gate Charge Qg200 nCLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIRF7769L2TR1PBFTR  
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RoHS Compliant, Halogen Free 
l
l
Lead-Free (Qualified up to 260°C Reflow)
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Ideal for High Performance Isolated Converter
Primary Switch Socket
l
Optimized for Synchronous Rectification
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Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
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Compatible with existing Surface Mount Techniques 
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Industrial Qualified
Applicable DirectFET Outline and Substrate Outline 
SB
SC
Description
The IRF7769L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
achieve the lowest on-state resistance in a package that has a footprint smaller than a D
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7769L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
Absolute Maxim um Ratings
V
Drain-to-Source Voltage
DS
V
Gate-to-Source Voltage
GS
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
E
Single Pulse Avalanche Energy
AS
Ã
I
Avalanche Current
AR
12.00
10.00
8.00
6.00
4.00
2.00
0.00
2.0
4.0
6.0
8.0
10.0 12.0 14.0 16.0
V GS , Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage

Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
D
M2
M4
2
PAK and only 0.7 mm profile. The DirectFET package
Parameter
@ 10V
(Silicon Limited)
GS
@ 10V
(Silicon Limited)
GS
e
@ 10V
(Silicon Limited)
GS
@ 10V
(Package Limited)
GS
h
3.10
I D = 74A
3.00
T J = 125°C
2.90
T J = 25°C
2.80
20
Fig 2. Typical On-Resistance vs. Drain Current
T
measured with thermocouple mounted to top (Drain) of part.
C
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
= 25°C, L = 0.09mH, R
J
PD -
97413B
IRF7769L2TRPbF
IRF7769L2TR1PbF
DirectFET™ Power MOSFET ‚
V
V
R
DSS
GS
DS(on)
100V min ±20V max
2.8mΩ@ 10V
Q
Q
V
g tot
gd
gs(th)
200nC
110nC
2.7V
S
S
S
S
G
D
S
S
S
S
DirectFET™ ISOMETRIC
L8
L4
L6
L8
TM
packaging to
Max.
Units
100
±20
124
88
20
375
500
260
74
T A = 25°C
V GS = 7.0V
V GS = 8.0V
V GS = 10V
V GS = 15V
40
60
80
I D , Drain Current (A)
= 25Ω, I
= 74A.
G
AS
V
A
mJ
A
100
1
2/2/2010

IRF7769L2TR1PBF Summary of contents

  • Page 1

    ... Fig 2. Typical On-Resistance vs. Drain Current „ T measured with thermocouple mounted to top (Drain) of part. C … Repetitive rating; pulse width limited by max. junction temperature. † Starting T = 25° 0.09mH 97413B IRF7769L2TRPbF IRF7769L2TR1PbF DirectFET™ Power MOSFET ‚ DSS GS DS(on) 100V min ±20V max 2.8mΩ@ 10V tot ...

  • Page 2

    Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th) ...

  • Page 3

    Absolute Maximum Ratings 25°C Power Dissipation D C Power Dissipation 100° Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

  • Page 4

    PULSE WIDTH 3. 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 25V ≤ 60µs PULSE WIDTH 100 10 1 0.1 2.0 ...

  • Page 5

    175° 25° -40°C 1 0.1 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 125 100 ...

  • Page 6

    Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 280 TOP Single ...

  • Page 7

    D DUT 20K Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. ...

  • Page 8

    Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE www.irf.com ...

  • Page 9

    Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking Note: For the most current drawing please refer to IR website at www.irf.com DIMENSIONS METRIC IMPERIAL CODE MAX MIN MIN MAX 9.15 0.356 ...

  • Page 10

    DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: CONTROLLING DIMENSIONS NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7769L2PBF). REEL DIMENSIONS STANDARD OPTION (QTY 4000) METRIC IMPERIAL CODE MIN MAX MIN ...

  • Page 11

    ... Part number Package Type IRF7769L2TRPbF DirectFET2 Large Can IRF7769L2TR1PbF DirectFET2 Large Can † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. ...