IRF7769L2TR1PBF International Rectifier, IRF7769L2TR1PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7769L2TR1PBF
• Description: MOSFET N-CH 100V 375A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7769L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 11560pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 124 A
• Power Dissipation: 125 W
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7769L2TR1PBFTR

Fig 10. Typical Source-Drain Diode Forward Voltage
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Fig 12. Maximum Drain Current vs. Case Temperature
125
100
1000
75
50
25
100
0
0.1
10
1
25
0.2
50
0.4
V SD , Source-to-Drain Voltage (V)
T C , CaseTemperature (°C)
75
0.6
100
0.8
Fig 14. Maximum Avalanche Energy Vs. Drain Current
T J = 175°C
T J = 25°C
T J = -40°C
1200
1000
800
600
400
200
125
1.0
0
25
V GS = 0V
1.2
150
Starting T J , Junction Temperature (°C)
50
175
75
100
TOP
BOTTOM
125
13A
20A
74A
150
I D
10000
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1000
100
0.1
10
-75 -50 -25
Fig 13. Typical Threshold Voltage vs.
1
175
Fig11. Maximum Safe Operating Area
0
Tc = 25°C
Tj = 175°C
Single Pulse
V DS , Drain-toSource Voltage (V)
Junction Temperature
DC
T J , Temperature ( °C )
0
1
10msec
OPERATION IN THIS AREA
LIMITED BY R DS (on)
25
50
10
100µsec
1msec
75
100 125 150 175
I D = 1.0A
I D = 1.0mA
I D = 250µA
100
1000
5