IRF7769L2TR1PBF International Rectifier, IRF7769L2TR1PBF Datasheet - Page 9

• Manufacturer Part Number: IRF7769L2TR1PBF
• Description: MOSFET N-CH 100V 375A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7769L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 11560pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 124 A
• Power Dissipation: 125 W
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7769L2TR1PBFTR

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
Note: For the most current drawing please refer to IR website at
DirectFET™ Part Marking
www.irf.com
™
DATE CODE
Line above the last character of
PART NUMBER
BATCH NUMBER
the date code indicates "Lead-Free"
GATE MARKING
LOGO
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
1.18
1.34
9.05
6.85
5.90
0.55
0.58
0.98
0.73
0.38
2.52
0.616
0.020
0.09
MIN
METRIC
DIMENSIONS
http://www.irf.com/package
1.22
1.02
1.47
9.15
7.10
6.00
0.65
0.62
0.77
0.42
2.69
0.676
0.080
0.18
MAX
0.356
0.270
0.232
0.022
0.023
0.046
0.015
0.029
0.015
0.053
0.099
0.0235
0.0008
0.003
MIN
IMPERIAL
0.360
0.280
0.236
0.026
0.024
0.048
0.017
0.030
0.017
0.058
0.106
0.0274
0.0031
0.007
MAX
9