STB180N55F3 STMicroelectronics, STB180N55F3 Datasheet

MOSFET N-CH 55V 120A D2PAK

STB180N55F3

Manufacturer Part Number
STB180N55F3
Description
MOSFET N-CH 55V 120A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB180N55F3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.5 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
330W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0035 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
330 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7939-2
STB180N55F3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB180N55F3
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB180N55F3
Manufacturer:
ST
0
Part Number:
STB180N55F3
Manufacturer:
ST
Quantity:
20 000
Order codes
Features
1. Value limited by wire bonding
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “single feature size™”
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Application
June 2007
STB180N55F3
STP180N55F3
Ultra low on-resistance
100% avalanche tested
Switching applications
Type
STB180N55F3
STP180N55F3
Part number
V
55V
55V
DSS
R
3.5mΩ
3.8mΩ
DS(on)
N-channel 55V - 3.2mΩ - 120A - D
120A
120A
180N55F3
180N55F3
I
D
Marking
(1)
(1)
330W
330W
Pw
Rev 2
Internal schematic diagram
STripFET™ Power MOSFET
Package
TO-220
D
2
PAK
TO-220
STB180N55F3
STP180N55F3
1
2
3
2
PAK/TO-220
Tape & reel
Packaging
Tube
D
2
PAK
www.st.com
1
3
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Related parts for STB180N55F3

STB180N55F3 Summary of contents

Page 1

... Order codes Part number STB180N55F3 STP180N55F3 June 2007 N-channel 55V - 3.2mΩ - 120A - (1) 120A 330W (1) 120A 330W Internal schematic diagram Marking 180N55F3 180N55F3 Rev 2 STB180N55F3 STP180N55F3 2 PAK/TO-220 STripFET™ Power MOSFET TO-220 Package Packaging 2 D PAK Tape & reel TO-220 PAK ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ STB180N55F3 - STP180N55F3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STB180N55F3 - STP180N55F3 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) Drain current (continuous (1) Drain current (continuous (2) Drain current (pulsed Total dissipation at T TOT Derating factor (3) Peak diode recovery voltage slope dv/dt (4) Single pulse avalanche energy Operating junction temperature ...

Page 4

... Test conditions V = 15V 25V 1MHz 27.5V 4.7Ω (see Figure 12, Figure 17 44V 10V, GS (see Figure 13) STB180N55F3 - STP180N55F3 Min. Typ. Max 100 ± = 250µ 60A 2.9 3.2 Min. Typ. Max. = 60A 150 D 6800 1450 60A D 150 = 10V 110 50 = 120A, 100 30 26 ...

Page 5

... STB180N55F3 - STP180N55F3 Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% ...

Page 6

... Electrical characteristics Electrical characteristics (curves) 2.1 Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Normalized B VDSS 6/14 Figure 2. Figure 4. vs temperature Figure 6. STB180N55F3 - STP180N55F3 Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STB180N55F3 - STP180N55F3 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/14 ...

Page 8

... Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/14 STB180N55F3 - STP180N55F3 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform ...

Page 9

... STB180N55F3 - STP180N55F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STB180N55F3 - STP180N55F3 inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.036 0.044 0.067 0.017 0.023 0.048 0.053 0.352 0.368 0.315 ...

Page 11

... STB180N55F3 - STP180N55F3 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.49 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 ...

Page 12

... MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.933 0.956 STB180N55F3 - STP180N55F3 REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12 ...

Page 13

... STB180N55F3 - STP180N55F3 6 Revision history Table 6. Revision history Date 31-Jan-2007 01-Jun-2007 Revision 1 First version 2 Complete version Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STB180N55F3 - STP180N55F3 ...

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