FDPF7N50 Fairchild Semiconductor, FDPF7N50 Datasheet

MOSFET N-CH 500V 7A TO-220F

FDPF7N50

Manufacturer Part Number
FDPF7N50
Description
MOSFET N-CH 500V 7A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF7N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
900 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
16.6nC @ 10V
Input Capacitance (ciss) @ Vds
940pF @ 25V
Power - Max
31.3W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
31300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2007 Fairchild Semiconductor Corporation
FDP7N50/FDPF7N50 REV. A
FDP7N50
500V N-Channel MOSFET
Features
• 7A, 500V, R
• Low gate charge ( typical 12.8 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* Drain current limited by maximum junction temperature.
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 9 pF)
DS(on)
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
D
S
= 0.9Ω @V
/FDPF7N50
GS
TO-220
FDP Series
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
C
C
= 25°C)
= 100°C)
G
D
S
1
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
FDPF Series
FDP7N50
FDP7N50
0.71
62.5
4.2
28
89
1.4
0.5
7
-55 to +150
500
±30
270
300
8.9
4.5
7
G
FDPF7N50
FDPF7N50
4.2 *
0.31
28 *
62.5
7 *
39
3.2
--
UniFET
D
S
March 2007
www.fairchildsemi.com
Unit
W/°C
Unit
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDPF7N50 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP7N50/FDPF7N50 REV. A Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 7A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP7N50/FDPF7N50 REV. A Package Reel Size TO-220 -- TO-220F -- T = 25°C unless otherwise noted C Conditions 250μ ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.5 2 10V GS 1.5 1.0 0.5 0 Drain Current [A] D Figure 5. Capacitance Characteristics 1000 C iss C oss 100 C rss Drain-Source Voltage [V] DS FDP7N50/FDPF7N50 REV. A Figure 2. Transfer Characteristics Notes : - 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 20V GS o ...

Page 4

... Limited by R DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current Vs. Case Temperature Case Temperature [ C FDP7N50/FDPF7N50 REV. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes : 250 μ A 0.5 D 0.0 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area ...

Page 5

... Figure 11-1. Transient Thermal Response Curve - FDP7N50 Figure 11-2. Transient Thermal Response Curve - FDPF7N50 FDP7N50/FDPF7N50 REV tio tio ( θ (t) θ ( θ ( θ www.fairchildsemi.com ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP7N50/FDPF7N50 REV. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP7N50/FDPF7N50 REV. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP7N50/FDPF7N50 REV. A TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP7N50/FDPF7N50 REV. A (Continued) TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP7N50/FDPF7N50 REV. A HiSeC™ Programmable Active Droop™ ® i-Lo™ QFET ImpliedDisconnect™ QS™ IntelliMAX™ QT Optoelectronics™ ISOPLANAR™ ...

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