MOSFET N-CH 500V 11.5A TO-220F

FDPF12N50T

Manufacturer Part NumberFDPF12N50T
DescriptionMOSFET N-CH 500V 11.5A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF12N50T datasheet
 


Specifications of FDPF12N50T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs650 mOhm @ 6A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C11.5AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs30nC @ 10VInput Capacitance (ciss) @ Vds1315pF @ 25V
Power - Max42WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.55 Ohms
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current6.9 APower Dissipation165 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP12N50 / FDPF12N50
N-Channel MOSFET
500V, 11.5A, 0.65Ω
Features
• R
= 0.55Ω (Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 22nC)
• Low C
( Typ. 11pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
TO-220
G
D
S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ.
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP12N50 / FDPF12N50 Rev. A
Description
= 6A
These N-Channel enhancement mode power field effect
D
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
June 2007
UniFET
D
G
S
FDP12N50
FDPF12N50
500
±30
11.5
11.5 *
6.9
6.9 *
(Note 1)
46
46 *
(Note 2)
456
(Note 1)
11.5
(Note 1)
16.7
(Note 3)
4.5
165
42
1.33
0.3
-55 to +150
300
FDP12N50
FDPF12N50
0.75
3.0
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
switching
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF12N50T Summary of contents

  • Page 1

    ... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP12N50 / FDPF12N50 Rev. A Description = 6A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

  • Page 2

    Package Marking and Ordering Information Device Marking Device FDP12N50 FDP12N50 FDPF12N50 FDPF12N50 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J I Zero Gate Voltage Drain Current ...

  • Page 3

    Typical Performance Characteristics Figure 1. On-Region Characteristics 10 8 6.5 V 6 0.1 0.05 0 ,Drain-Source Voltage[V] DS Figure 3. On-Resistance Variation vs. Drain Current ...

  • Page 4

    Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature J Figure 9-1. Maximum Safe Operating Area - FDP12N50 100 10 1 Operation in This Area is ...

  • Page 5

    Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP12N50 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E Figure 11-2. Transient Thermal Response Curve - FDPF12N50 5 0.5 1 0.2 0.1 0.05 ...

  • Page 6

    FDP12N50 / FDPF12N50 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ...

  • Page 8

    FDP12N50 / FDPF12N50 Rev www.fairchildsemi.com ...

  • Page 9

    Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 #1 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP12N50 / FDPF12N50 Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) 2.54TYP [2.54 ] ±0.20 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 10

    ... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Green FPS™ e-Series™ Build it Now™ GTO™ CorePLUS™ i-Lo™ ...