FDPF12N50T Fairchild Semiconductor, FDPF12N50T Datasheet - Page 3

• Manufacturer Part Number: FDPF12N50T
• Description: MOSFET N-CH 500V 11.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF12N50T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1315pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.9 A
• Power Dissipation: 165 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N50 / FDPF12N50 Rev. A
Typical Performance Characteristics
2000
1500
1000
0.05
1.5
1.0
0.5
0.0
Figure 5. Capacitance Characteristics
500
Figure 3. On-Resistance Variation vs.
0.1
10
Figure 1. On-Region Characteristics
30
1
0
0.1
0.1
0
V
GS
=
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
6
V
Drain Current and Gate Voltage
DS
DS
C
C
C
, Drain-Source Voltage [V]
,Drain-Source Voltage[V]
oss
rss
iss
I
D
, Drain Current [A]
V
GS
12
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
= 10V
1
V
GS
= 20V
*Notes:
18
1. 250
2. T
* Note : T
C
= 25
μ
(
s Pulse Test
C ds = shorted
*Note:
o
24
1. V
2. f = 1MHz
C
J
10
= 25
GS
10
= 0V
o
C
)
30
30
20
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
10
40
10
10
8
6
4
2
0
1
1
0.0
0
5
*Notes:
1. V
2. 250
V
DS
4
SD
μ
Variation vs. Source Current
and Temperature
= 20V
, Body Diode Forward Voltage [V]
s Pulse Test
V
Q
0.5
GS
V
V
V
g
150
DS
DS
DS
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
8
6
= 100V
= 250V
= 400V
o
C
150
o
C
1.0
12
25
*Notes:
1. V
2. 250
o
*Note: I
C
16
7
GS
-55
25
μ
1.5
= 0V
s Pulse Test
o
o
C
C
D
20
= 11.5A
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2.0
24
8