FDPF12N50T Fairchild Semiconductor, FDPF12N50T Datasheet - Page 5

• Manufacturer Part Number: FDPF12N50T
• Description: MOSFET N-CH 500V 11.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF12N50T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1315pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.9 A
• Power Dissipation: 165 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N50 / FDPF12N50 Rev. A
Typical Performance Characteristics
1E-3
0.01
0.1
0.01
3
1
0.1
Figure 11-1. Transient Thermal Response Curve - FDP12N50
Figure 11-2. Transient Thermal Response Curve - FDPF12N50
10
1
5
10
0.01
Single pulse
0.5
0.05
0.02
0.2
-5
0.1
0.5
0.05
0.02
0.01
0.2
-4
0.1
Single pulse
10
10
-3
-4
10
Rectangular Pulse Duration [sec]
10
Rectangular Pulse Duration [sec]
-2
-3
(Continued)
10
-1
10
-2
5
10
0
10
*Notes:
-1
P
1. Z
2. Duty Factor, D=t
3. T
* Notes :
DM
P
1. Z
2. Duty Factor, D=t
3. T
10
θ
DM
JM
JC
θ
JM
1
- T
JC
(t) = 0.75
- T
(t) = 3
C
t
= P
1
C
10
t
t
= P
2
1
DM
t
o
0
2
o
C/W Max.
C/W Max.
DM
10
* Z
1
2
* Z
/t
θ
1
2
JC
/t
θ
2
JC
(t)
(t)
10
10
1
3
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