FDPF39N20 Fairchild Semiconductor, FDPF39N20 Datasheet - Page 4

• Manufacturer Part Number: FDPF39N20
• Description: MOSFET N-CH 200V 39A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r
• Type: Power MOSFETr

Specifications of FDPF39N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2130pF @ 25V
• Power - Max: 37W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 39A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 66mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.056 Ohms
• Forward Transconductance Gfs (max / Min): 28.5 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 39 A
• Power Dissipation: 37 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.066Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP39N20 / FDPF39N20 Rev. B
Typical Performance Characteristics
Figure 9-1. Maximum Safe Operating Area
Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 7. Breakdown Voltage Variation
40
30
20
10
10
10
0
10
10
10
25
-1
-2
2
1
0
1.2
1.1
1.0
0.9
0.8
10
-100
0
- FDP39N20
vs. Temperature
Operation in This Area
is Limited by R
50
-50
V
T
T
DS
C
J
, Junction Temperature [
, Case Temperature [
DS(on)
, Drain-Source Voltage [V]
0
75
10
1
50
100
100 ms
DC
100
10 ms
o
C]
* Notes :
o
C]
1. T
2. T
3. Single Pulse
1 ms
* Notes :
1. V
2. I
C
J
= 150
= 25
D
125
100
GS
10
= 250
150
= 0 V
o
2
C
o
C
μ
s
μ
A
10
μ
s
200
150
(Continued)
4
10
10
Figure 9-2. Maximum Safe Operating Area
10
10
10
-1
-2
2
1
0
10
Figure 8. On-Resistance Variation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
0
Operation in This Area
is Limited by R
-50
DS(on)
- FDPF39N20
V
DS
T
vs. Temperature
, Drain-Source Voltage [V]
J
, Junction Temperature [
0
10
1
50
DC
100 ms
10 ms
* Notes :
1. T
2. T
3. Single Pulse
100
1 ms
C
J
o
C]
= 150
= 25
100
o
10
C
μ
o
C
10
s
* Notes :
2
1. V
2. I
150
μ
D
s
GS
= 19.5 A
= 10 V
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