FDPF16N50T Fairchild Semiconductor, FDPF16N50T Datasheet - Page 3

• Manufacturer Part Number: FDPF16N50T
• Description: MOSFET N-CH 500V 16A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF16N50T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1945pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 38.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP16N50 / FDPF16N50 Rev. B
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
4000
3000
2000
1000
0.6
0.5
0.4
0.3
0.2
10
10
10
10
-1
2
1
0
10
0
0
10
Drain Current and Gate Voltage
-1
-1
Top :
Bottom : 5.5 V
5
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
10
C
V
V
iss
DS
DS
C
, Drain-Source Voltage [V]
C
, Drain-Source Voltage [V]
I
rss
D
oss
15
10
, Drain Current [A]
10
0
0
V
GS
= 10V
20
25
C
C
C
iss
oss
rss
= C
= C
= C
V
GS
gs
gd
10
ds
30
* Note : T
+ C
10
+ C
= 20V
1
* Notes :
1. 250
2. T
1
gd
gd
(C
C
* Note :
ds
= 25
J
1. V
2. f = 1 MHz
μ
= 25
= shorted)
s Pulse Test
35
o
GS
C
o
C
= 0 V
40
3
10
10
10
10
12
10
1
0
1
0
0.2
8
6
4
2
0
2
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
Variation vs. Source Current
0.6
25
150
4
o
C
o
25
C
150
0.8
10
o
V
V
C
o
GS
and Temperatue
SD
Q
C
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
G
1.0
, Total Gate Charge [nC]
V
V
V
DS
DS
6
DS
= 400V
= 250V
1.2
= 100V
1.4
20
-55
o
C
1.6
8
1.8
* Notes :
* Notes :
1. V
2. 250
* Note : I
30
1. V
2. 250
2.0
10
GS
DS
μ
= 0V
= 40V
μ
s Pulse Test
s Pulse Test
D
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2.2
= 16A
2.4
12
40