MOSFET N-CH 500V 16A TO-220F

FDPF16N50

Manufacturer Part NumberFDPF16N50
DescriptionMOSFET N-CH 500V 16A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF16N50 datasheet
 

Specifications of FDPF16N50

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs380 mOhm @ 8A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C16AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs45nC @ 10VInput Capacitance (ciss) @ Vds1945pF @ 25V
Power - Max38.5WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id16ADrain Source Voltage Vds500V
On Resistance Rds(on)380mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ5VRohs CompliantYes
ConfigurationSingleResistance Drain-source Rds (on)0.38 Ohms
Forward Transconductance Gfs (max / Min)23 SDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current16 A
Power Dissipation38.5 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FDP16N50 / FDPF16N50
500V N-Channel MOSFET
Features
• 16A, 500V, R
= 0.38Ω @V
DS(on)
GS
• Low gate charge ( typical 32 nC)
• Low C
( typical 20 pF)
rss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220
G
D
S
FDP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
Drain Current
D
I
Drain Current
DM
V
Gate-Source voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
T
Operating and Storage Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering Purpose,
L
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θCS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP16N50 / FDPF16N50 Rev. B
Description
= 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
D
G
S
FDPF Series
Parameter
- Continuous (T
= 25°C)
C
- Continuous (T
= 100°C)
C
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(T
= 25°C)
C
- Derate above 25°C
Parameter
1
April 2007
UniFET
D
G
S
FDP16N50
FDPF16N50
Unit
500
16
16 *
9.6 ∗
9.6
64 ∗
64
±30
780
16
20
4.5
200
38.5
1.59
0.3
W/°C
-55 to +150
300
FDP16N50
FDPF16N50
Unit
°C/W
0.63
3.3
°C/W
0.5
--
°C/W
62.5
62.5
www.fairchildsemi.com
TM
V
A
A
A
V
mJ
A
mJ
V/ns
W
°C
°C

FDPF16N50 Summary of contents

  • Page 1

    ... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP16N50 / FDPF16N50 Rev. B Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... Starting ≤ 16A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP16N50 / FDPF16N50 Rev. B Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250μ ...

  • Page 3

    ... GS 0.4 0.3 0 Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C oss 2000 C iss 1000 C rss Drain-Source Voltage [V] DS FDP16N50 / FDPF16N50 Rev. B Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current 20V Note : 0.2 ...

  • Page 4

    ... DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Currentvs. Case Temperature Case Temperature [ C FDP16N50 / FDPF16N50 Rev. B (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 μ A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area ...

  • Page 5

    ... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP16N50 Figure 11-2. Transient Thermal Response Curve - FDPF16N50 FDP16N50 / FDPF16N50 Rev. B (Continued tio tio θ θ θ θ www.fairchildsemi.com ...

  • Page 6

    ... Unclamped Inductive Switching Test Circuit & Waveforms FDP16N50 / FDPF16N50 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP16N50 / FDPF16N50 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP16N50 / FDPF16N50 Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP16N50 / FDPF16N50 Rev. B TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 10

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP16N50 / FDPF16N50 Rev. B i-Lo™ Power-SPM™ ® ImpliedDisconnect™ PowerTrench IntelliMAX™ Programmable Active Droop™ ® ISOPLANAR™ QFET MICROCOUPLER™ ...