FDA33N25 Fairchild Semiconductor, FDA33N25 Datasheet - Page 2

• Manufacturer Part Number: FDA33N25
• Description: MOSFET N-CH 250V 33A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA33N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 46.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 245W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.094 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 33 A
• Power Dissipation: 245 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA33N25 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
∆BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
∆T
SD
Device Marking
DSS
Symbol
≤ 33A, di/dt ≤ 200A/µs, V
DSS
J
FDA33N25
AS
= 33A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDA33N25
DSS
G
Device
= 25Ω, Starting T
Parameter
, Starting T
J
T
= 25°C
C
J
= 25
= 25°C
o
C unless otherwise noted
Package
TO-3PN
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 25Ω
= 250V, V
= 200V, T
= 0V, I
= ±30V, V
= 20V, I
= 25V, V
= 200V, I
= 125V, I
= 0V, I
= V
= 10V, I
= 10V
DS
Test Conditions
, I
SD
2
SD
D
Reel Size
D
D
GS
GS
D
D
= 16.5A
= 33A
= 33A
GS
C
= 16.5A
DS
= 250µA
= 33A
= 33A
= 125
= 0V
= 0V, T
-
= 0V
= 0V
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
Min.
250
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.088
1655
Typ.
0.34
10.8
24.2
142
256
315
2.3
33
77
68
35
36
16
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
0.094
±100
2200
46.8
293
165
146
420
132
1.4
5.0
76
10
55
33
1
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
µA
pF
pF
pF
nA
ns
ns
ns
ns
ns
µC
V
Ω
A
A
V
V
S
o
C