FDA33N25 Fairchild Semiconductor, FDA33N25 Datasheet - Page 4

• Manufacturer Part Number: FDA33N25
• Description: MOSFET N-CH 250V 33A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA33N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 46.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 245W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.094 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 33 A
• Power Dissipation: 245 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA33N25 Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
100
400
1.2
1.1
1.0
0.9
0.8
0.1
10
-100
1
1
Operation in This Area
is Limited by R
-50
vs. Temperature
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
0
DS(on)
1E-3
0.01
10
0.1
1
10
*Notes:
50
0.5
0.05
0.2
0.02
0.01
-5
1. T
2. T
3. Single Pulse
0.1
Single pulse
C
J
= 150
= 25
100
o
o
C
C
*Notes:
Figure 11. Transient Thermal Response Curve
10
1. V
2. I
[
100
o
-4
10ms
C
DC
D
100
150
1ms
GS
]
= 250
20
µ
= 0V
s
µ
s
µ
A
Rectangular Pulse Duration [sec]
200
400
10
-3
(Continued)
10
-2
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
35
30
25
20
15
10
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
5
0
-100
25
10
*Notes:
1. Z
2. Duty Factor, D=t
3. T
P
-1
DM
-50
θ
JM
50
JC
T
J
- T
(t) = 0.51
, Junction Temperature
vs. Temperature
T
vs. Case Temperature
C
C
t
, Case Temperature
= P
1
0
t
10
2
DM
75
o
0
C/W Max.
* Z
1
/t
θ
50
2
JC
(t)
100
10
100
1
*Notes:
[
[
1. V
2. I
o
o
C
125
C
]
D
150
]
GS
= 16.5A
= 10V
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150
200