FDPF44N25T Fairchild Semiconductor, FDPF44N25T Datasheet - Page 5

• Manufacturer Part Number: FDPF44N25T
• Description: MOSFET N-CH 250V 44A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF44N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 69 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2870pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.069 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP44N25 / FDPF44N25T Rev. B
Typical Performance Characteristics
Figure 11-2. Transient Thermal Response Curve for FDPF44N25
Figure 11-1. Transient Thermal Response Curve for FDP44N25
10
10
10
10
10
-1
-2
-1
-2
10
0
10
-5
-5
D=0.5
D=0.5
0.05
0.02
0.01
0.05
0.02
0.01
0.1
0.1
0.2
0.2
single pulse
10
10
-4
-4
t
t
1
1
, Square W ave Pulse Duration [sec]
, Square Wave Pulse Duration [sec]
single pulse
10
10
-3
-3
(Continued)
5
10
10
-2
-2
* N otes :
* Notes :
1. Z
2. D uty Factor, D=t
3. T
10
1. Z
2. Duty Factor, D=t
3. T
10
P
P
DM
θ
JM
-1
-1
JC
DM
θ
JM
(t) = 0.41
JC
- T
(t) = 3.3
- T
C
C
= P
t
= P
1
t
t
1
DM
2
t
2
DM
o
0
* Z
C /W Max.
C/W Max.
10
10
* Z
1
/t
θ
JC
1
0
0
2
/t
θ
JC
(t)
2
(t)
10
10
1
1
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