FDPF18N50 Fairchild Semiconductor, FDPF18N50 Datasheet - Page 3

MOSFET N-CH 500V 18A TO-220F

FDPF18N50

Manufacturer Part Number
FDPF18N50
Description
MOSFET N-CH 500V 18A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF18N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
265 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2860pF @ 25V
Power - Max
38.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.265 Ohms
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
58 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FDP18N50 / FDPF18N50 Rev. B
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
5000
4000
3000
2000
1000
0.6
0.5
0.4
0.3
0.2
0.1
10
10
10
-1
2
1
0
10
0
0
10
Drain Current and Gate Voltage
-1
-1
Top :
Bottom : 5.5 V
5
10
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
C
C
15
C
oss
iss
rss
20
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
25
I
D
10
10
, Drain Current [A]
0
0
30
35
V
GS
40
= 10V
45
C
C
C
iss
oss
rss
= C
= C
= C
50
gs
gd
10
ds
* Note : T
10
+ C
+ C
1
* Notes :
55
1. 250
2. T
1
gd
gd
V
(C
GS
C
* Note :
ds
= 25
J
= 20V
60
μ
1. V
2. f = 1 MHz
= 25
= shorted)
s Pulse Test
o
GS
C
o
C
65
= 0 V
70
3
10
10
10
10
10
10
12
10
2
1
0
2
1
0
0.2
8
6
4
2
0
2
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
Variation vs. Source Current
150
0.6
25
4
o
10
25
C
o
C
150
o
0.8
C
V
V
o
GS
SD
Q
C
and Temperatue
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
G
1.0
, Total Gate Charge [nC]
V
6
DS
20
V
1.2
= 400V
DS
V
= 250V
DS
= 100V
1.4
-55
o
C
8
1.6
30
1.8
* Notes :
* Notes :
1. V
2. 250
* Note : I
1. V
2. 250
2.0
10
GS
DS
40
μ
= 0V
μ
= 40V
s Pulse Test
s Pulse Test
D
2.2
www.fairchildsemi.com
= 18A
2.4
12
50

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