IRFBC30SPBF Vishay, IRFBC30SPBF Datasheet
IRFBC30SPBF
Specifications of IRFBC30SPBF
Related parts for IRFBC30SPBF
IRFBC30SPBF Summary of contents
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... N-Channel MOSFET its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L available for low-profile applications PAK (TO-263) D PAK (TO-263) SiHFBC30S-GE3 SiHFBC30STRL-GE3 IRFBC30SPbF IRFBC30STRLPbF SiHFBC30S-E3 SiHFBC30STL-E3 IRFBC30S - SiHFBC30S - = 25 °C, unless otherwise noted °C C ...
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... IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). For recommended footprint and soldering techniques refer to application note #AN-994. SPECIFICATIONS ( °C, unless otherwise noted) ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91111 S10-2433-Rev. B, 25-Oct-10 IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Fig Normalized On-Resistance vs. Temperature Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...
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... IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91111 S10-2433-Rev. B, 25-Oct-10 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91111 S10-2433-Rev. B, 25-Oct-10 IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L + Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91111 S10-2433-Rev ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91111. Document Number: 91111 S10-2433-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...