MOSFET N-CH 800V 4.1A D2PAK

IRFBE30SPBF

Manufacturer Part NumberIRFBE30SPBF
DescriptionMOSFET N-CH 800V 4.1A D2PAK
ManufacturerVishay
IRFBE30SPBF datasheets
 


Specifications of IRFBE30SPBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs3 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)800VCurrent - Continuous Drain (id) @ 25° C4.1A
Vgs(th) (max) @ Id4V @ 250µAGate Charge (qg) @ Vgs78nC @ 10V
Input Capacitance (ciss) @ Vds1300pF @ 25VPower - Max125W
Mounting TypeSurface MountPackage / CaseD²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature- 55 CConfigurationSingle
Resistance Drain-source Rds (on)3 Ohm @ 10 VDrain-source Breakdown Voltage800 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current4.1 A
Power Dissipation125000 mWMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTContinuous Drain Current Id4.1A
Drain Source Voltage Vds800VOn Resistance Rds(on)3ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFBE30SPBF
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Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead-Free
Description
Third Generation HEXFETs from International
Rectifier provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy (Thermally Limited)
AS
Avalanche Current
I
AR
Repetitive Avalanche Energy
E
AR
Peak Diode Recovery dv/dt
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R
Junction-to-Case
θJC
Case-to-Sink, Flat, Greased Surface
R
θCS
R
Junction-to-Ambient
θJA
Document Number: 91119
IRFBE30SPbF
IRFBE30LPbF
G
Parameter
@ 10V
GS
@ 10V
GS
d
e
Parameter
Min.
PD - 95507
®
HEXFET
Power MOSFET
D
V
= 800V
DSS
R
= 3.0Ω
DS(on)
I
= 4.1A
D
S
2
D
Pak
TO-262
IRFBE30S
IRFBE30L
Max.
Units
4.1
A
2.6
16
125
W
1.0
W/°C
± 20
V
260
mJ
4.1
A
13
mJ
2.0
V/ns
-55 to + 150
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
Max.
Units
–––
–––
1.0
°C/W
–––
0.50
–––
–––
–––
62
www.vishay.com
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IRFBE30SPBF Summary of contents

  • Page 1

    ... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw Thermal Resistance R Junction-to-Case θJC Case-to-Sink, Flat, Greased Surface R θCS R Junction-to-Ambient θJA Document Number: 91119 IRFBE30SPbF IRFBE30LPbF G Parameter @ 10V GS @ 10V Parameter Min 95507 ® HEXFET Power MOSFET D V ...

  • Page 2

    ... See Fig. 6 & 400V 4. 12Ω 95Ω, See Fig Between lead, D 6mm (0.25in.) from package G and center of die contact 25V DS ƒ = 1.0MHz, See Fig. 5 Conditions MOSFET symbol D showing the integral reverse G p-n junction diode 25° 4.1A 25° 4. di/dt = 100A/µs www.vishay.com 2 ...

  • Page 3

    ... Document Number: 91119 www.vishay.com 3 ...

  • Page 4

    ... Document Number: 91119 www.vishay.com 4 ...

  • Page 5

    ... Document Number: 91119 www.vishay.com 5 ...

  • Page 6

    ... Document Number: 91119 www.vishay.com 6 ...

  • Page 7

    ... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent GS Document Number: 91119 + • • • • G • SD • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ =10V www.vishay.com 7 ...

  • Page 8

    ... INTE RNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE Document Number: 91119 PART NUMB ER INT E RNAT IONAL IER F 530S LOGO DAT E CODE 2000 AS SE MBLY LOT CODE LINE L PART NUMBER F530S DATE CODE P = DES IGNATE S LEAD-FRE E PRODUCT (OPTIONAL 2000 EMBLY CODE www.vishay.com 8 ...

  • Page 9

    ... INT ERNAT IONAL RECT IFIER LOGO DAT E CODE YEAR 7 = 1997 AS S EMBLY WEEK CODE LINE C PART NUMBER INT ERNAT IONAL RECT IFIER LOGO DAT E CODE P = DES IGNAT ES LEAD-FREE AS S EMBLY PRODUCT (OPT IONAL) LOT CODE YEAR 7 = 1997 WEEK EMBLY CODE www.vishay.com 9 ...

  • Page 10

    ... Data and specifications subject to change without notice. 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) 4.72 (.136) 4.52 (.178) 27.40 (1.079) 23.90 (.941) 4 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 4 24.40 (.961) 3 TAC Fax: (310) 252-7903 07/04 www.vishay.com 10 ...

  • Page 11

    ... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...