IRFBE30SPBF Vishay, IRFBE30SPBF Datasheet - Page 4

MOSFET N-CH 800V 4.1A D2PAK

IRFBE30SPBF

Manufacturer Part Number
IRFBE30SPBF
Description
MOSFET N-CH 800V 4.1A D2PAK
Manufacturer
Vishay
Datasheets

Specifications of IRFBE30SPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
4.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.1 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.1A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBE30SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBE30SPBF
Quantity:
8 150
Company:
Part Number:
IRFBE30SPBF
Quantity:
70 000
Document Number: 91119
www.vishay.com
4

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