This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Drain Current [A] D Figure 5. Capacitance Characteristics 12000 C iss = oss = rss = iss 9000 6000 C oss 3000 C rss 0 0 Drain-Source Voltage [V] DS FDI030N06 Rev. A Figure 2. Transfer Characteristics 400 100 *Notes: 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage o *Note 210 280 350 Figure 6. Gate Charge Characteristics ...
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