MOSFET N-CH 250V 790MA SOT223

IRFL214

Manufacturer Part NumberIRFL214
DescriptionMOSFET N-CH 250V 790MA SOT223
ManufacturerVishay
IRFL214 datasheet
 

Specifications of IRFL214

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2 Ohm @ 470mA, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C790mAVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs8.2nC @ 10VInput Capacitance (ciss) @ Vds140pF @ 25V
Power - Max2WMounting TypeSurface Mount
Package / CaseSOT-223 (3 leads + Tab), SC-73, TO-261ConfigurationSingle Dual Drain
Transistor PolarityN-ChannelResistance Drain-source Rds (on)2 Ohms
Drain-source Breakdown Voltage250 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current0.79 APower Dissipation2 W
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFL214  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
SOT-223
D
S
G
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91194
S09-0927-Rev. B, 25-May-09
Power MOSFET
FEATURES
• Surface Mount
250
• Available in Tape and Reel
2.0
• Dynamic dV/dt Rating
8.2
• Repetitive Avalanche Rated
1.8
• Fast Switching
4.5
• Ease of Paralleling
Single
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
S
pick-and-place as with other SOT or SOIC packages but has
N-Channel MOSFET
the added advantage of improved thermal performace due to
an enlarged tab for heatsinking. Power dissipation of greater
than 1.25 W is possible in a typical surface mount
application.
SOT-223
IRFL214PbF
SiHFL214-E3
IRFL214
SiHFL214
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
IRFL214, SiHFL214
Vishay Siliconix
device
design,
low
on-resistance
SOT-223
a
IRFL214TRPbF
a
SiHFL214T-E3
a
IRFL214TR
a
SiHFL214T
SYMBOL
LIMIT
V
250
DS
V
± 20
GS
0.79
I
D
0.50
I
6.3
DM
0.025
0.017
E
50
AS
I
0.79
AR
E
0.31
AR
3.1
P
D
2.0
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
1

IRFL214 Summary of contents

  • Page 1

    ... Power dissipation of greater than 1. possible in a typical surface mount application. SOT-223 IRFL214PbF SiHFL214-E3 IRFL214 SiHFL214 = 25 °C, unless otherwise noted ° 100 ° ° °C A IRFL214, SiHFL214 Vishay Siliconix device design, low on-resistance SOT-223 a IRFL214TRPbF a SiHFL214T-E3 a IRFL214TR a SiHFL214T SYMBOL LIMIT V 250 DS V ± 0. ...

  • Page 2

    ... IRFL214, SiHFL214 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 128 mH ≤ 2.7 A, dI/dt ≤ 65 A/µs, V ≤ ...

  • Page 3

    ... TEST CONDITIONS MOSFET symbol I S showing the integral reverse junction diode ° 0. ° 2.7 A, dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated Fig Normalized On-Resistance vs. Temperature IRFL214, SiHFL214 Vishay Siliconix MIN. TYP. MAX 190 390 b - 0.64 1.3 and L S Fig Typical Transfer Characteristics www ...

  • Page 4

    ... IRFL214, SiHFL214 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91194 S09-0927-Rev. B, 25-May-09 ...

  • Page 5

    ... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91194 S09-0927-Rev. B, 25-May-09 IRFL214, SiHFL214 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

  • Page 6

    ... IRFL214, SiHFL214 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

  • Page 7

    ... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig.14 - For N-Channel IRFL214, SiHFL214 Vishay Siliconix + + www.vishay.com 7 ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...